Designing Optimal Distorted-Octahedra Superlattices for Strong Topological Hall Effect

Fuente: arXiv
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Main Authors: Fan, Yiyan, Zhang, Qinghua, Lu, Jingdi, Huo, Chuanrui, Wang, Tianyang, Jin, Qiao, Cui, Ting, Wang, Qianying, Rong, Dongke, Deng, Shiqing, Wang, Lingfei, Jin, Kuijuan, Chen, Jun, Guo, Er-Jia
Format: Preprint
Published: 2025
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author Fan, Yiyan
Zhang, Qinghua
Lu, Jingdi
Huo, Chuanrui
Wang, Tianyang
Jin, Qiao
Cui, Ting
Wang, Qianying
Rong, Dongke
Deng, Shiqing
Wang, Lingfei
Jin, Kuijuan
Chen, Jun
Guo, Er-Jia
author_facet Fan, Yiyan
Zhang, Qinghua
Lu, Jingdi
Huo, Chuanrui
Wang, Tianyang
Jin, Qiao
Cui, Ting
Wang, Qianying
Rong, Dongke
Deng, Shiqing
Wang, Lingfei
Jin, Kuijuan
Chen, Jun
Guo, Er-Jia
contents Topologically protected spin states hold great promise for applications in next generation of memory circuits and spintronic devices. These intriguing textures typically emerge in bulk materials or heterostructures with broken inversion symmetry, accompanied by an enhanced Dzyaloshinskii-Moriya interaction (DMI). In this study, we successfully induced the topological Hall effect (THE) in atomically designed (DyScO3)n/(SrRuO3)n (DnSn) superlattices over a significant range of temperatures (10~120K) and thicknesses (16~40nm). Using magnetic force microscopy (MFM), we observed the formation and stability of magnetic domains, such as topological skyrmions. By precisely controlling the interlayer thickness (n) and biaxial strain, we elucidated the mechanisms underlying the modulation and induction of magnetic topological states. Supporting evidence was provided by scanning transmission electron microscopy (STEM) and X-ray absorption spectroscopy (XAS), thereby lending further credence to our conclusions. These heterostructures offer a universal method for exploring topological phenomena driven by distorted octahedra, while enhancing the integrability and addressability of topologically protected functional devices.
format Preprint
id arxiv_https___arxiv_org_abs_2504_15563
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Designing Optimal Distorted-Octahedra Superlattices for Strong Topological Hall Effect
Fan, Yiyan
Zhang, Qinghua
Lu, Jingdi
Huo, Chuanrui
Wang, Tianyang
Jin, Qiao
Cui, Ting
Wang, Qianying
Rong, Dongke
Deng, Shiqing
Wang, Lingfei
Jin, Kuijuan
Chen, Jun
Guo, Er-Jia
Materials Science
Topologically protected spin states hold great promise for applications in next generation of memory circuits and spintronic devices. These intriguing textures typically emerge in bulk materials or heterostructures with broken inversion symmetry, accompanied by an enhanced Dzyaloshinskii-Moriya interaction (DMI). In this study, we successfully induced the topological Hall effect (THE) in atomically designed (DyScO3)n/(SrRuO3)n (DnSn) superlattices over a significant range of temperatures (10~120K) and thicknesses (16~40nm). Using magnetic force microscopy (MFM), we observed the formation and stability of magnetic domains, such as topological skyrmions. By precisely controlling the interlayer thickness (n) and biaxial strain, we elucidated the mechanisms underlying the modulation and induction of magnetic topological states. Supporting evidence was provided by scanning transmission electron microscopy (STEM) and X-ray absorption spectroscopy (XAS), thereby lending further credence to our conclusions. These heterostructures offer a universal method for exploring topological phenomena driven by distorted octahedra, while enhancing the integrability and addressability of topologically protected functional devices.
title Designing Optimal Distorted-Octahedra Superlattices for Strong Topological Hall Effect
topic Materials Science
url https://arxiv.org/abs/2504.15563