Cita APA (7a ed.)

Jiang, C. (2025). Can we build a transistor using vacancy-induced bound states in a topological insulator.

Cita Chicago Style (17a ed.)

Jiang, Cunyuan. Can We Build a Transistor Using Vacancy-induced Bound States in a Topological Insulator. 2025.

Cita MLA (9a ed.)

Jiang, Cunyuan. Can We Build a Transistor Using Vacancy-induced Bound States in a Topological Insulator. 2025.

Precaución: Estas citas no son 100% exactas.