Jiang, C. (2025). Can we build a transistor using vacancy-induced bound states in a topological insulator.
Cita Chicago Style (17a ed.)Jiang, Cunyuan. Can We Build a Transistor Using Vacancy-induced Bound States in a Topological Insulator. 2025.
Cita MLA (9a ed.)Jiang, Cunyuan. Can We Build a Transistor Using Vacancy-induced Bound States in a Topological Insulator. 2025.
Precaución: Estas citas no son 100% exactas.