Enhancing Radiation Hardness and Granularity in HV-CMOS: The RD50-MPW4 Sensor
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| Main Authors: | , , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
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2025
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| author | Pilsl, B. Bergauer, T. Casanova, R. Handerkas, H. Irmler, C. Kraemer, U. Marco-Hernandez, R. de Cos, J. Mazorra Palomo, F. R. Portschy, S. Powell, S. Sieberer, P. Sonneveld, J. Steininger, H. Vilella, E. Wade, B. Zhang, C. Zhang, S. |
| author_facet | Pilsl, B. Bergauer, T. Casanova, R. Handerkas, H. Irmler, C. Kraemer, U. Marco-Hernandez, R. de Cos, J. Mazorra Palomo, F. R. Portschy, S. Powell, S. Sieberer, P. Sonneveld, J. Steininger, H. Vilella, E. Wade, B. Zhang, C. Zhang, S. |
| contents | The latest HV-CMOS pixel sensor developed by the former CERN-RD50-CMOS group, known as the \mpw, demonstrates competitive radiation tolerance, spatial granularity, and timing resolution -- key requirements for future high-energy physics experiments such as the HL-LHC and FCC. Fabricated using a \SI{150}{nm} CMOS process by \emph{LFoundry}, it introduces several improvements over its predecessor, the \emph{RD50-MPW3}, including separated power domains for reduced noise, a new backside biasing scheme, and an enhanced guard ring structure, enabling operation at bias voltages up to \SI{800}{V}.
Tests with non-irradiated samples achieved hit detection efficiencies exceeding \SI{99.9}{\%} and a spatial resolution around \SI{16}{μm}. Neutron-irradiated sensors were characterized using IV measurements and test-beam campaigns, confirming the sensor's robustness in high-radiation environments. The results highlight the ability of HV-CMOS technology to restore hit detection efficiency post-irradiation by increasing the applied bias voltage. Details of these measurements and timing performance are presented in this paper. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2504_15730 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Enhancing Radiation Hardness and Granularity in HV-CMOS: The RD50-MPW4 Sensor Pilsl, B. Bergauer, T. Casanova, R. Handerkas, H. Irmler, C. Kraemer, U. Marco-Hernandez, R. de Cos, J. Mazorra Palomo, F. R. Portschy, S. Powell, S. Sieberer, P. Sonneveld, J. Steininger, H. Vilella, E. Wade, B. Zhang, C. Zhang, S. Instrumentation and Detectors High Energy Physics - Experiment The latest HV-CMOS pixel sensor developed by the former CERN-RD50-CMOS group, known as the \mpw, demonstrates competitive radiation tolerance, spatial granularity, and timing resolution -- key requirements for future high-energy physics experiments such as the HL-LHC and FCC. Fabricated using a \SI{150}{nm} CMOS process by \emph{LFoundry}, it introduces several improvements over its predecessor, the \emph{RD50-MPW3}, including separated power domains for reduced noise, a new backside biasing scheme, and an enhanced guard ring structure, enabling operation at bias voltages up to \SI{800}{V}. Tests with non-irradiated samples achieved hit detection efficiencies exceeding \SI{99.9}{\%} and a spatial resolution around \SI{16}{μm}. Neutron-irradiated sensors were characterized using IV measurements and test-beam campaigns, confirming the sensor's robustness in high-radiation environments. The results highlight the ability of HV-CMOS technology to restore hit detection efficiency post-irradiation by increasing the applied bias voltage. Details of these measurements and timing performance are presented in this paper. |
| title | Enhancing Radiation Hardness and Granularity in HV-CMOS: The RD50-MPW4 Sensor |
| topic | Instrumentation and Detectors High Energy Physics - Experiment |
| url | https://arxiv.org/abs/2504.15730 |