Universal giant spin Hall effect in moire metal
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arXiv
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| Autori principali: | , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| _version_ | 1866913804289310720 |
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| author | Mao, Ning Xu, Cheng Bao, Ting Peshcherenko, Nikolai Felser, Claudia Zhang, Yang |
| author_facet | Mao, Ning Xu, Cheng Bao, Ting Peshcherenko, Nikolai Felser, Claudia Zhang, Yang |
| contents | While moiré phenomena have been extensively studied in low-carrier-density systems such as graphene and semiconductors, their implications for metallic systems with large Fermi surfaces remain largely unexplored. Using GPU-accelerated large-scale ab-initio quantum transport simulations, we investigate spin transport in two distinct platforms: twisted bilayer MoTe$_2$ (semiconductor, from lightly to heavily doping) and NbX$_2$ ($X$ = S, Se; metals). In twisted MoTe$_2$, the spin Hall conductivity (SHC) evolves from $4\tfrac{e}{4π}$ at $5.09^\circ$ to $10\tfrac{e}{4π}$ at $1.89^\circ$, driven by the emergence of multiple isolated Chern bands. Remarkably, in heavily doped metallic regimes--without isolated Chern bands--we observe a universal amplification of the spin Hall effect from Fermi surface reconstruction under long-wavelength potential, with the peak SHC tripling from $6\tfrac{e}{4π}$ at $5.09^\circ$ to $17\tfrac{e}{4π}$ at $3.89^\circ$. For prototypical moiré metals like twisted NbX$_2$, we identify a record SHC of $-17\tfrac{e}{4π}$ (-5200 $(\hbar / e)S/cm$ in 3D units), surpassing all known bulk materials. These results establish moiré engineering as a powerful strategy for enhancing spin-dependent transport, and advancing ab-initio methodologies to bridge atomic-scale precision with device-scale predictions in transport simulations. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2504_16179 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Universal giant spin Hall effect in moire metal Mao, Ning Xu, Cheng Bao, Ting Peshcherenko, Nikolai Felser, Claudia Zhang, Yang Mesoscale and Nanoscale Physics While moiré phenomena have been extensively studied in low-carrier-density systems such as graphene and semiconductors, their implications for metallic systems with large Fermi surfaces remain largely unexplored. Using GPU-accelerated large-scale ab-initio quantum transport simulations, we investigate spin transport in two distinct platforms: twisted bilayer MoTe$_2$ (semiconductor, from lightly to heavily doping) and NbX$_2$ ($X$ = S, Se; metals). In twisted MoTe$_2$, the spin Hall conductivity (SHC) evolves from $4\tfrac{e}{4π}$ at $5.09^\circ$ to $10\tfrac{e}{4π}$ at $1.89^\circ$, driven by the emergence of multiple isolated Chern bands. Remarkably, in heavily doped metallic regimes--without isolated Chern bands--we observe a universal amplification of the spin Hall effect from Fermi surface reconstruction under long-wavelength potential, with the peak SHC tripling from $6\tfrac{e}{4π}$ at $5.09^\circ$ to $17\tfrac{e}{4π}$ at $3.89^\circ$. For prototypical moiré metals like twisted NbX$_2$, we identify a record SHC of $-17\tfrac{e}{4π}$ (-5200 $(\hbar / e)S/cm$ in 3D units), surpassing all known bulk materials. These results establish moiré engineering as a powerful strategy for enhancing spin-dependent transport, and advancing ab-initio methodologies to bridge atomic-scale precision with device-scale predictions in transport simulations. |
| title | Universal giant spin Hall effect in moire metal |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2504.16179 |