Quantum sensing with spin defects in boron nitride nanotubes

Fuente: arXiv
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Hauptverfasser: Rizzato, Roberto, Hidalgo, Andrea Alberdi, Nie, Linyan, Blundo, Elena, von Grafenstein, Nick R., Finley, Jonathan J., Bucher, Dominik B.
Format: Preprint
Veröffentlicht: 2025
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author Rizzato, Roberto
Hidalgo, Andrea Alberdi
Nie, Linyan
Blundo, Elena
von Grafenstein, Nick R.
Finley, Jonathan J.
Bucher, Dominik B.
author_facet Rizzato, Roberto
Hidalgo, Andrea Alberdi
Nie, Linyan
Blundo, Elena
von Grafenstein, Nick R.
Finley, Jonathan J.
Bucher, Dominik B.
contents Spin defects in semiconductors are widely investigated for various applications in quantum sensing. Conventional host materials such as diamond and hexagonal boron nitride (hBN) provide bulk or low-dimensional platforms for optically addressable spin systems, but often lack the structural properties needed for chemical sensing. Here, we introduce a new class of quantum sensors based on naturally occurring spin defects in boron nitride nanotubes (BNNTs), which combine high surface area with omnidirectional spin control, key features for enhanced sensing performance. First, we present strong evidence that these defects are carbon-related, akin to recently identified centers in hBN, and demonstrate coherent spin control over ensembles embedded within dense, microscale BNNTs networks. Using dynamical decoupling, we enhance spin coherence times by a factor exceeding 300x and implement high-resolution detection of radiofrequency signals. By integrating the BNNT mesh sensor into a microfluidic platform we demonstrate chemical sensing of paramagnetic ions in solution, with detectable concentrations reaching levels nearly 1000 times lower than previously demonstrated using comparable hBN-based systems. This highly porous and flexible architecture positions BNNTs as a powerful new host material for quantum sensing.
format Preprint
id arxiv_https___arxiv_org_abs_2504_16725
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Quantum sensing with spin defects in boron nitride nanotubes
Rizzato, Roberto
Hidalgo, Andrea Alberdi
Nie, Linyan
Blundo, Elena
von Grafenstein, Nick R.
Finley, Jonathan J.
Bucher, Dominik B.
Quantum Physics
Mesoscale and Nanoscale Physics
Materials Science
Applied Physics
Chemical Physics
Spin defects in semiconductors are widely investigated for various applications in quantum sensing. Conventional host materials such as diamond and hexagonal boron nitride (hBN) provide bulk or low-dimensional platforms for optically addressable spin systems, but often lack the structural properties needed for chemical sensing. Here, we introduce a new class of quantum sensors based on naturally occurring spin defects in boron nitride nanotubes (BNNTs), which combine high surface area with omnidirectional spin control, key features for enhanced sensing performance. First, we present strong evidence that these defects are carbon-related, akin to recently identified centers in hBN, and demonstrate coherent spin control over ensembles embedded within dense, microscale BNNTs networks. Using dynamical decoupling, we enhance spin coherence times by a factor exceeding 300x and implement high-resolution detection of radiofrequency signals. By integrating the BNNT mesh sensor into a microfluidic platform we demonstrate chemical sensing of paramagnetic ions in solution, with detectable concentrations reaching levels nearly 1000 times lower than previously demonstrated using comparable hBN-based systems. This highly porous and flexible architecture positions BNNTs as a powerful new host material for quantum sensing.
title Quantum sensing with spin defects in boron nitride nanotubes
topic Quantum Physics
Mesoscale and Nanoscale Physics
Materials Science
Applied Physics
Chemical Physics
url https://arxiv.org/abs/2504.16725