Chalcogen Vacancies Rule Charge Recombination in Pnictogen Chalcohalide Solar-Cell Absorbers
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| Format: | Preprint |
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2025
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| _version_ | 1866912346445709312 |
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| author | López, Cibrán Kavanagh, Seán R. Benítez, Pol Saucedo, Edgardo Walsh, Aron Scanlon, David O. Cazorla, Claudio |
| author_facet | López, Cibrán Kavanagh, Seán R. Benítez, Pol Saucedo, Edgardo Walsh, Aron Scanlon, David O. Cazorla, Claudio |
| contents | Pnictogen chalcohalides (MChX, M = Bi, Sb; Ch = S, Se; X = I, Br) represent an emerging class of nontoxic photovoltaic absorbers, valued for their favorable synthesis conditions and excellent optoelectronic properties. Despite their proposed defect tolerance, stemming from the antibonding nature of their valence and conduction bands, their experimentally reported power conversion efficiencies remain below 10%, far from the ideal Shockley-Queisser limit of 30%. Using advanced first-principles calculations and defect sampling techniques, we uncover a complex point-defect landscape in MChX materials, exemplified by BiSeI. Previously overlooked selenium vacancies are identified as critical nonradiative charge-recombination centers, which exist in high concentrations and, although exhibit modest capture coefficients, can reduce the maximum power conversion efficiency of BiSeI down to 24%. We argue that such detrimental effects can be mitigated by cation-poor synthesis conditions and strategic anion substitutions. Building on these insights, and supported by further simulations, we predict BiSBr to be a more defect-tolerant light absorber. This study not only identifies efficiency-limiting factors in MChX but also provides a roadmap for their improvement, paving the way for next-generation solution-processed chalcogenide photovoltaics. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2504_18089 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Chalcogen Vacancies Rule Charge Recombination in Pnictogen Chalcohalide Solar-Cell Absorbers López, Cibrán Kavanagh, Seán R. Benítez, Pol Saucedo, Edgardo Walsh, Aron Scanlon, David O. Cazorla, Claudio Materials Science Pnictogen chalcohalides (MChX, M = Bi, Sb; Ch = S, Se; X = I, Br) represent an emerging class of nontoxic photovoltaic absorbers, valued for their favorable synthesis conditions and excellent optoelectronic properties. Despite their proposed defect tolerance, stemming from the antibonding nature of their valence and conduction bands, their experimentally reported power conversion efficiencies remain below 10%, far from the ideal Shockley-Queisser limit of 30%. Using advanced first-principles calculations and defect sampling techniques, we uncover a complex point-defect landscape in MChX materials, exemplified by BiSeI. Previously overlooked selenium vacancies are identified as critical nonradiative charge-recombination centers, which exist in high concentrations and, although exhibit modest capture coefficients, can reduce the maximum power conversion efficiency of BiSeI down to 24%. We argue that such detrimental effects can be mitigated by cation-poor synthesis conditions and strategic anion substitutions. Building on these insights, and supported by further simulations, we predict BiSBr to be a more defect-tolerant light absorber. This study not only identifies efficiency-limiting factors in MChX but also provides a roadmap for their improvement, paving the way for next-generation solution-processed chalcogenide photovoltaics. |
| title | Chalcogen Vacancies Rule Charge Recombination in Pnictogen Chalcohalide Solar-Cell Absorbers |
| topic | Materials Science |
| url | https://arxiv.org/abs/2504.18089 |