Enhanced Backgate Tunability on Interfacial Carrier Concentration in Ionic Liquid-Gated MoS2 Devices
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arXiv
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| Main Authors: | , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| _version_ | 1866913807494807552 |
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| author | Chen, Qiao Yan, Chengyu Lan, Changshuai Song, Qiyang Yan, Yi Wang, Shun |
| author_facet | Chen, Qiao Yan, Chengyu Lan, Changshuai Song, Qiyang Yan, Yi Wang, Shun |
| contents | The periodic spatial modulation potential arising from the zig-zag distribution of ions at large gate voltage in an ionic liquid gated device may enable functionalities in a similar way as nanopatterning and moiré engineering. However, the inherent coupling between periodic modulation potential and carrier concentration in ionic liquid devices has hindered further exploration. Here, we demonstrate the feasibility of decoupling manipulation on periodic modulation potential and carrier density in an ionic liquid device by using a conventional backgate. The backgate is found to have a tunability on carrier concentration comparable to that of ionic gating, especially at large ionic liquid gate voltage, by activating the bulk channels mediated back tunneling between the trapped bands and interfacial channel. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2504_18170 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Enhanced Backgate Tunability on Interfacial Carrier Concentration in Ionic Liquid-Gated MoS2 Devices Chen, Qiao Yan, Chengyu Lan, Changshuai Song, Qiyang Yan, Yi Wang, Shun Mesoscale and Nanoscale Physics The periodic spatial modulation potential arising from the zig-zag distribution of ions at large gate voltage in an ionic liquid gated device may enable functionalities in a similar way as nanopatterning and moiré engineering. However, the inherent coupling between periodic modulation potential and carrier concentration in ionic liquid devices has hindered further exploration. Here, we demonstrate the feasibility of decoupling manipulation on periodic modulation potential and carrier density in an ionic liquid device by using a conventional backgate. The backgate is found to have a tunability on carrier concentration comparable to that of ionic gating, especially at large ionic liquid gate voltage, by activating the bulk channels mediated back tunneling between the trapped bands and interfacial channel. |
| title | Enhanced Backgate Tunability on Interfacial Carrier Concentration in Ionic Liquid-Gated MoS2 Devices |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2504.18170 |