Anomalous Hall effect in antiferromagnetic RGaGe (R = Nd, Gd) single crystals
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| Main Authors: | , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866910918949994496 |
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| author | Cao, Weizheng Xu, Yuze Liao, Yi Pei, Cuiying Wu, Juefei Wang, Qi Qi, Yanpeng |
| author_facet | Cao, Weizheng Xu, Yuze Liao, Yi Pei, Cuiying Wu, Juefei Wang, Qi Qi, Yanpeng |
| contents | Recently, the non-centrosymmetric Weyl semimetallic candidate family RTX (R = rare-earth element, T= poor metal, X = Si and Ge) has recently attracted significant attention due to its exotic quantum states and potential applications in quantum devices. In this study, our comprehensive investigations of high-quality NdGaGe and GdGaGe single crystals reveal distinct magnetic and electrical responses. Both compounds exhibit antiferromagnetic transitions with TN - 7.6 K and 22.4 K for NdGaGe and GdGaGe, respectively. NdGaGe exhibits strong magnetic anisotropy (\c{hi}c /\c{hi}a - 70). In contrast, GdGaGe displays weak magnetic anisotropic behavior (\c{hi}c /\c{hi}a - 1) with a distinctive spin-flop transition. Below TN, NdGaGe shows significant negative magnetoresistance due to the reduced spin-disorder scattering arising from the field-induced spin alignment. GdGaGe exhibits more complex magnetoresistance behavior: positive values at low fields transitioning to negative values attributed to the reduced spin-flop scattering. Specially, NdGaGe demonstrates a large anomalous Hall conductance (AHC) of approximately 368 Ω-1 cm-1, which is dominated by the intrinsic mechanism. These reveal the pivotal role of rare-earth elements in modulating the electronic structure, magnetic properties, and transport characteristics of the RGaGe system, thereby providing valuable insights for developing next-generation spintronic devices. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2504_18313 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Anomalous Hall effect in antiferromagnetic RGaGe (R = Nd, Gd) single crystals Cao, Weizheng Xu, Yuze Liao, Yi Pei, Cuiying Wu, Juefei Wang, Qi Qi, Yanpeng Superconductivity Materials Science Recently, the non-centrosymmetric Weyl semimetallic candidate family RTX (R = rare-earth element, T= poor metal, X = Si and Ge) has recently attracted significant attention due to its exotic quantum states and potential applications in quantum devices. In this study, our comprehensive investigations of high-quality NdGaGe and GdGaGe single crystals reveal distinct magnetic and electrical responses. Both compounds exhibit antiferromagnetic transitions with TN - 7.6 K and 22.4 K for NdGaGe and GdGaGe, respectively. NdGaGe exhibits strong magnetic anisotropy (\c{hi}c /\c{hi}a - 70). In contrast, GdGaGe displays weak magnetic anisotropic behavior (\c{hi}c /\c{hi}a - 1) with a distinctive spin-flop transition. Below TN, NdGaGe shows significant negative magnetoresistance due to the reduced spin-disorder scattering arising from the field-induced spin alignment. GdGaGe exhibits more complex magnetoresistance behavior: positive values at low fields transitioning to negative values attributed to the reduced spin-flop scattering. Specially, NdGaGe demonstrates a large anomalous Hall conductance (AHC) of approximately 368 Ω-1 cm-1, which is dominated by the intrinsic mechanism. These reveal the pivotal role of rare-earth elements in modulating the electronic structure, magnetic properties, and transport characteristics of the RGaGe system, thereby providing valuable insights for developing next-generation spintronic devices. |
| title | Anomalous Hall effect in antiferromagnetic RGaGe (R = Nd, Gd) single crystals |
| topic | Superconductivity Materials Science |
| url | https://arxiv.org/abs/2504.18313 |