Tailoring hBN's Phonon Polaritons with the Plasmonic Phase-Change Material In3SbTe2
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2025
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| author | Jäckering, Lina Moos, Aaron Conrads, Lukas Li, Yiheng Rothstein, Alexander Malik, Dominique Watanabe, Kenji Taniguchi, Takashi Wuttig, Matthias Stampfer, Christoph Taubner, Thomas |
| author_facet | Jäckering, Lina Moos, Aaron Conrads, Lukas Li, Yiheng Rothstein, Alexander Malik, Dominique Watanabe, Kenji Taniguchi, Takashi Wuttig, Matthias Stampfer, Christoph Taubner, Thomas |
| contents | Polaritons in van-der-Waals materials (vdWM) promise high confinement and multiple tailoring options by optical structures, e.g., resonators, launching structures and lenses. These optical structures are conventionally fabricated using cumbersome multi-process lithography techniques. In contrast, phase-change materials (PCMs) offer fast and reconfigurable programming of optical structures. PCMs can reversibly be switched between two stable phases with distinct permittivities by local heating, e.g., by optical laser pulses. While the well-known dielectric PCM GeSbTe-alloys feature only a permittivity change, the PCM In3SbTe2 can be switched between a dielectric and metallic phase. This makes In3SbTe2 promising for programming metallic launching structures. Here, we demonstrate direct optical programming and thereby rapid prototyping of optical launching structures in In3SbTe2 to tailor and confine polaritons in vdWM. We combine the vdWM hexagonal boron nitride (hBN) with In3SbTe2 and optically program circular resonators for hBN's phonon polaritons through hBN into In3SbTe2. We investigate the polariton resonators with near-field optical microscopy. Demonstrating the reconfigurability, we decrease the resonator diameter to increase the polariton confinement. Finally, we fabricate focusing structures for hBN's phonon polaritons whose focal point is changed in a second post-processing step. We promote In3SbTe2 as a versatile platform for rapid prototyping of polariton optics in vdWM. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2504_18418 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Tailoring hBN's Phonon Polaritons with the Plasmonic Phase-Change Material In3SbTe2 Jäckering, Lina Moos, Aaron Conrads, Lukas Li, Yiheng Rothstein, Alexander Malik, Dominique Watanabe, Kenji Taniguchi, Takashi Wuttig, Matthias Stampfer, Christoph Taubner, Thomas Optics Materials Science Polaritons in van-der-Waals materials (vdWM) promise high confinement and multiple tailoring options by optical structures, e.g., resonators, launching structures and lenses. These optical structures are conventionally fabricated using cumbersome multi-process lithography techniques. In contrast, phase-change materials (PCMs) offer fast and reconfigurable programming of optical structures. PCMs can reversibly be switched between two stable phases with distinct permittivities by local heating, e.g., by optical laser pulses. While the well-known dielectric PCM GeSbTe-alloys feature only a permittivity change, the PCM In3SbTe2 can be switched between a dielectric and metallic phase. This makes In3SbTe2 promising for programming metallic launching structures. Here, we demonstrate direct optical programming and thereby rapid prototyping of optical launching structures in In3SbTe2 to tailor and confine polaritons in vdWM. We combine the vdWM hexagonal boron nitride (hBN) with In3SbTe2 and optically program circular resonators for hBN's phonon polaritons through hBN into In3SbTe2. We investigate the polariton resonators with near-field optical microscopy. Demonstrating the reconfigurability, we decrease the resonator diameter to increase the polariton confinement. Finally, we fabricate focusing structures for hBN's phonon polaritons whose focal point is changed in a second post-processing step. We promote In3SbTe2 as a versatile platform for rapid prototyping of polariton optics in vdWM. |
| title | Tailoring hBN's Phonon Polaritons with the Plasmonic Phase-Change Material In3SbTe2 |
| topic | Optics Materials Science |
| url | https://arxiv.org/abs/2504.18418 |