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| Main Author: | |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2504.18548 |
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| _version_ | 1866915291299053568 |
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| author | Geng, Yifei |
| author_facet | Geng, Yifei |
| contents | GaN defect-based quantum emitters show significant potential for quantum information technologies, yet their intrinsic nature is not fully understood. In this work, we present results on the temperature-dependent emission polarization of GaN defect single-photon emitters integrated with solid immersion lenses. The photoluminescence (PL) remains linearly polarized over the temperature range of 10K to 300K, with a slight rotation in the polarization direction observed at intermediate temperatures. Possible mechanisms underlying this behavior are analyzed, and a roadmap for future research is outlined. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2504_18548 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Temperature-Dependent Emission Polarization in GaN Defect-Based Quantum Emitters Geng, Yifei Optics Materials Science GaN defect-based quantum emitters show significant potential for quantum information technologies, yet their intrinsic nature is not fully understood. In this work, we present results on the temperature-dependent emission polarization of GaN defect single-photon emitters integrated with solid immersion lenses. The photoluminescence (PL) remains linearly polarized over the temperature range of 10K to 300K, with a slight rotation in the polarization direction observed at intermediate temperatures. Possible mechanisms underlying this behavior are analyzed, and a roadmap for future research is outlined. |
| title | Temperature-Dependent Emission Polarization in GaN Defect-Based Quantum Emitters |
| topic | Optics Materials Science |
| url | https://arxiv.org/abs/2504.18548 |