Temperature-Dependent Emission Polarization in GaN Defect-Based Quantum Emitters

Fuente: arXiv
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Autor principal: Geng, Yifei
Formato: Preprint
Publicado: 2025
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author Geng, Yifei
author_facet Geng, Yifei
contents GaN defect-based quantum emitters show significant potential for quantum information technologies, yet their intrinsic nature is not fully understood. In this work, we present results on the temperature-dependent emission polarization of GaN defect single-photon emitters integrated with solid immersion lenses. The photoluminescence (PL) remains linearly polarized over the temperature range of 10K to 300K, with a slight rotation in the polarization direction observed at intermediate temperatures. Possible mechanisms underlying this behavior are analyzed, and a roadmap for future research is outlined.
format Preprint
id arxiv_https___arxiv_org_abs_2504_18548
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Temperature-Dependent Emission Polarization in GaN Defect-Based Quantum Emitters
Geng, Yifei
Optics
Materials Science
GaN defect-based quantum emitters show significant potential for quantum information technologies, yet their intrinsic nature is not fully understood. In this work, we present results on the temperature-dependent emission polarization of GaN defect single-photon emitters integrated with solid immersion lenses. The photoluminescence (PL) remains linearly polarized over the temperature range of 10K to 300K, with a slight rotation in the polarization direction observed at intermediate temperatures. Possible mechanisms underlying this behavior are analyzed, and a roadmap for future research is outlined.
title Temperature-Dependent Emission Polarization in GaN Defect-Based Quantum Emitters
topic Optics
Materials Science
url https://arxiv.org/abs/2504.18548