Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Davis, Miranda Leigh, Parolo, Simon, Agostini, Sandro, Reichl, Christian, Dietsche, Werner, Wegscheider, Werner
Format: Preprint
Veröffentlicht: 2025
Schlagworte:
Online-Zugang:https://arxiv.org/abs/2504.18627
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
_version_ 1866909594722238464
author Davis, Miranda Leigh
Parolo, Simon
Agostini, Sandro
Reichl, Christian
Dietsche, Werner
Wegscheider, Werner
author_facet Davis, Miranda Leigh
Parolo, Simon
Agostini, Sandro
Reichl, Christian
Dietsche, Werner
Wegscheider, Werner
contents The capacitance and differential conductance of MBE-grown AlGaAs/GaAs p-i-n diodes are investigated. In these diodes, the p-doped layer, an adjacent intrinsic spacer, and a central barrier are made of AlGaAs. Capacitance oscillations and hysteretic behavior are observed and understood to be consequences of the AlGaAs spacer properties. These findings have significant implications for the design of heterostructures aimed at achieving electrically contacted, closely spaced electron and hole layers.
format Preprint
id arxiv_https___arxiv_org_abs_2504_18627
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Charge Transfer Dynamics in an Electron-Hole Bilayer Device: Capacitance Oscillations and Hysteretic Behavior
Davis, Miranda Leigh
Parolo, Simon
Agostini, Sandro
Reichl, Christian
Dietsche, Werner
Wegscheider, Werner
Mesoscale and Nanoscale Physics
The capacitance and differential conductance of MBE-grown AlGaAs/GaAs p-i-n diodes are investigated. In these diodes, the p-doped layer, an adjacent intrinsic spacer, and a central barrier are made of AlGaAs. Capacitance oscillations and hysteretic behavior are observed and understood to be consequences of the AlGaAs spacer properties. These findings have significant implications for the design of heterostructures aimed at achieving electrically contacted, closely spaced electron and hole layers.
title Charge Transfer Dynamics in an Electron-Hole Bilayer Device: Capacitance Oscillations and Hysteretic Behavior
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2504.18627