Structural transformation for BaBiO3-δ thin films grown on SrTiO3-buffered Si(001) induced by an in-situ Molecular Beam Epitaxy cooldown process
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| Main Authors: | , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866916708919279616 |
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| author | Ahmed, Islam Richard, Olivier Carolan, Partrick Gambin, Marco Ceccon, Luca Kaviani, Moloud De Gendt, Stefan Merckling, Clement |
| author_facet | Ahmed, Islam Richard, Olivier Carolan, Partrick Gambin, Marco Ceccon, Luca Kaviani, Moloud De Gendt, Stefan Merckling, Clement |
| contents | Oxygen loss is one of the common defect types in perovskite oxides whose formation can be caused by a low oxygen background pressure during growth or by straining the thin film. Crystalline BaBiO3-δ thin films are grown by molecular beam epitaxy on SrTiO3 buffered Si(001) substrates. Adsorption-controlled regime governs the epitaxy, as the sticking coefficient of bismuth is boosted by supplying activated oxygen at plasma power of 600 W during epitaxy. Even though activated oxygen is supplied during the growth process, large amount of oxygen vacancies is found to be created in the thin film depending on the cooldown process. Perovskite structure is obtained when the cooldown process includes an extended period of time during which activated oxygen at plasma power of 600 W is supplied. Another way for inducing the structural transformation is enabled via an ex-situ 600°C anneal step at molecular oxygen for the sample which includes oxygen vacancy channels. The transformation into perovskite structure BaBiO3 is manifested as reconstructed octahedra based on transmission electron microscopy, Raman spectroscopy, and photoluminescence. Additionally, smaller out-of-plane lattice constant as well as increased monoclinicity are observed for the perovskite phase supported by X-ray diffraction data. In this paper, thermal mismatch and multivalency-facilitated tensile strain exerted on the layers by the underlying Si substrates are presented as the driving force behind the creation of oxygen vacancies. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2504_18871 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Structural transformation for BaBiO3-δ thin films grown on SrTiO3-buffered Si(001) induced by an in-situ Molecular Beam Epitaxy cooldown process Ahmed, Islam Richard, Olivier Carolan, Partrick Gambin, Marco Ceccon, Luca Kaviani, Moloud De Gendt, Stefan Merckling, Clement Materials Science Oxygen loss is one of the common defect types in perovskite oxides whose formation can be caused by a low oxygen background pressure during growth or by straining the thin film. Crystalline BaBiO3-δ thin films are grown by molecular beam epitaxy on SrTiO3 buffered Si(001) substrates. Adsorption-controlled regime governs the epitaxy, as the sticking coefficient of bismuth is boosted by supplying activated oxygen at plasma power of 600 W during epitaxy. Even though activated oxygen is supplied during the growth process, large amount of oxygen vacancies is found to be created in the thin film depending on the cooldown process. Perovskite structure is obtained when the cooldown process includes an extended period of time during which activated oxygen at plasma power of 600 W is supplied. Another way for inducing the structural transformation is enabled via an ex-situ 600°C anneal step at molecular oxygen for the sample which includes oxygen vacancy channels. The transformation into perovskite structure BaBiO3 is manifested as reconstructed octahedra based on transmission electron microscopy, Raman spectroscopy, and photoluminescence. Additionally, smaller out-of-plane lattice constant as well as increased monoclinicity are observed for the perovskite phase supported by X-ray diffraction data. In this paper, thermal mismatch and multivalency-facilitated tensile strain exerted on the layers by the underlying Si substrates are presented as the driving force behind the creation of oxygen vacancies. |
| title | Structural transformation for BaBiO3-δ thin films grown on SrTiO3-buffered Si(001) induced by an in-situ Molecular Beam Epitaxy cooldown process |
| topic | Materials Science |
| url | https://arxiv.org/abs/2504.18871 |