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| Main Authors: | , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2504.19477 |
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| _version_ | 1866915693596770304 |
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| author | Yamashita, Daiki Yumoto, Masaki Narazaki, Aiko Okano, Makoto |
| author_facet | Yamashita, Daiki Yumoto, Masaki Narazaki, Aiko Okano, Makoto |
| contents | We demonstrate a post-fabrication method that deterministically integrates hexagonal boron nitride (hBN) single-photon emitters (SPEs) onto silicon nitride (SiN) waveguides. Mechanically exfoliated hBN flakes are dry-transferred onto pre-fabricated SiN waveguides, and localized femtosecond laser irradiation is employed to induce defects with sub-microscale spatial precision. Confocal photoluminescence mapping reveals multiple laser-written bright defects, among which one emitter exhibits narrow spectral linewidth and polarization dependence characteristic of a dipole emitter. The emitter exhibits high brightness and temporal stability, and second-order photon correlation measurements confirm its single-photon nature. Furthermore, we successfully achieve on-chip excitation via the SiN waveguide, demonstrating the compatibility of our approach with mature photonic platform technologies. This deterministic integration technique offers a scalable pathway for incorporating quantum emitters into photonic circuits, paving the way for the development of quantum information processing and communication systems with two-dimensional material hybrid photonic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2504_19477 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Deterministic Integration of hBN Single-Photon Emitters on SiN Waveguides via Femtosecond Laser Processing Yamashita, Daiki Yumoto, Masaki Narazaki, Aiko Okano, Makoto Optics We demonstrate a post-fabrication method that deterministically integrates hexagonal boron nitride (hBN) single-photon emitters (SPEs) onto silicon nitride (SiN) waveguides. Mechanically exfoliated hBN flakes are dry-transferred onto pre-fabricated SiN waveguides, and localized femtosecond laser irradiation is employed to induce defects with sub-microscale spatial precision. Confocal photoluminescence mapping reveals multiple laser-written bright defects, among which one emitter exhibits narrow spectral linewidth and polarization dependence characteristic of a dipole emitter. The emitter exhibits high brightness and temporal stability, and second-order photon correlation measurements confirm its single-photon nature. Furthermore, we successfully achieve on-chip excitation via the SiN waveguide, demonstrating the compatibility of our approach with mature photonic platform technologies. This deterministic integration technique offers a scalable pathway for incorporating quantum emitters into photonic circuits, paving the way for the development of quantum information processing and communication systems with two-dimensional material hybrid photonic devices. |
| title | Deterministic Integration of hBN Single-Photon Emitters on SiN Waveguides via Femtosecond Laser Processing |
| topic | Optics |
| url | https://arxiv.org/abs/2504.19477 |