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Main Authors: Jayabalan, J., Chen, Jiyu, Pätzold, Laura, Petocchi, Francesco, Diekmann, Florian K., Najafianpour, Negar, Zhou, Ping, Schnelle, Walter, Siemann, Gesa-R., Hofmann, Philip, Roßnagel, Kai, Wehling, Tim, Eckstein, Martin, Werner, Philipp, Bovensiepen, Uwe
Format: Preprint
Published: 2025
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Online Access:https://arxiv.org/abs/2504.19961
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author Jayabalan, J.
Chen, Jiyu
Pätzold, Laura
Petocchi, Francesco
Diekmann, Florian K.
Najafianpour, Negar
Zhou, Ping
Schnelle, Walter
Siemann, Gesa-R.
Hofmann, Philip
Roßnagel, Kai
Wehling, Tim
Eckstein, Martin
Werner, Philipp
Bovensiepen, Uwe
author_facet Jayabalan, J.
Chen, Jiyu
Pätzold, Laura
Petocchi, Francesco
Diekmann, Florian K.
Najafianpour, Negar
Zhou, Ping
Schnelle, Walter
Siemann, Gesa-R.
Hofmann, Philip
Roßnagel, Kai
Wehling, Tim
Eckstein, Martin
Werner, Philipp
Bovensiepen, Uwe
contents In strongly correlated transition metal dichalcogenides, an intricate interplay of polaronic distortions, stacking arrangement, and electronic correlations determines the nature of the insulating state. Here, we study the response of the electronic structure to optical excitations to reveal the effect of chemical electron doping on this complex interplay. Transient changes in pristine and electron-doped 1$T$ -TaS$_2$ are measured by femtosecond time-resolved photoelectron spectroscopy and compared to theoretical modeling based on non-equilibrium dynamical mean-field theory and density functional theory. The fine changes in the oscillatory signal of the charge density wave amplitude mode indicate phase-dependent modifications in the Coulomb interaction and the hopping. Furthermore, we find an enhanced fraction of monolayers in the doped system. Our work demonstrates how the combination of time-resolved spectroscopy and advanced theoretical modeling provides insights into the physics of correlated transition metal dichalcogenides.
format Preprint
id arxiv_https___arxiv_org_abs_2504_19961
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Ultrafast Electronic Structure Engineering in 1$T$-TaS$_2$: Role of Doping and Amplitude Mode Dynamics
Jayabalan, J.
Chen, Jiyu
Pätzold, Laura
Petocchi, Francesco
Diekmann, Florian K.
Najafianpour, Negar
Zhou, Ping
Schnelle, Walter
Siemann, Gesa-R.
Hofmann, Philip
Roßnagel, Kai
Wehling, Tim
Eckstein, Martin
Werner, Philipp
Bovensiepen, Uwe
Strongly Correlated Electrons
In strongly correlated transition metal dichalcogenides, an intricate interplay of polaronic distortions, stacking arrangement, and electronic correlations determines the nature of the insulating state. Here, we study the response of the electronic structure to optical excitations to reveal the effect of chemical electron doping on this complex interplay. Transient changes in pristine and electron-doped 1$T$ -TaS$_2$ are measured by femtosecond time-resolved photoelectron spectroscopy and compared to theoretical modeling based on non-equilibrium dynamical mean-field theory and density functional theory. The fine changes in the oscillatory signal of the charge density wave amplitude mode indicate phase-dependent modifications in the Coulomb interaction and the hopping. Furthermore, we find an enhanced fraction of monolayers in the doped system. Our work demonstrates how the combination of time-resolved spectroscopy and advanced theoretical modeling provides insights into the physics of correlated transition metal dichalcogenides.
title Ultrafast Electronic Structure Engineering in 1$T$-TaS$_2$: Role of Doping and Amplitude Mode Dynamics
topic Strongly Correlated Electrons
url https://arxiv.org/abs/2504.19961