Electronic structure and hinge states of strained half-Heusler compounds LiSbZn and LiBiZn
Fuente:
arXiv
Guardado en:
| Autores principales: | , , , , , |
|---|---|
| Formato: | Preprint |
| Publicado: |
2025
|
| Materias: | |
| Acceso en línea: | |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| _version_ | 1866911174941999104 |
|---|---|
| author | Das, Sanjib Kumar Fulga, Ion Cosma Dhawan, Rakshanda Kandpal, Hem C. Brink, Jeroen van den Facio, Jorge I. |
| author_facet | Das, Sanjib Kumar Fulga, Ion Cosma Dhawan, Rakshanda Kandpal, Hem C. Brink, Jeroen van den Facio, Jorge I. |
| contents | Half-Heusler compounds are a class of materials with great potential for the study of distinct electronic states. In this work, we investigate, from first-principles, the possibility of hinge modes in closely related topological phases that are tunable by moderate uni-axial strain. We consider two compounds: LiSbZn and LiBiZn. While LiSbZn has a topologically trivial band structure, the larger spin-orbit coupling of Bi causes a band inversion in LiBiZn. We predict the existence of topologically trivial hinge states in both cases. The hinge modes are affected by both the crystal termination, and the bulk topological phase transitions, albeit indirectly: When present, topological surface modes hybridize with the hinge states and obscure their visibility. Thus, we find that the most visible hinge modes occur when no band inversions are present in the material. Our work highlights the interplay and competition between surface and hinge modes in half-Heuslers, and may help guide the experimental search for robust boundary signatures in these materials. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2504_20190 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Electronic structure and hinge states of strained half-Heusler compounds LiSbZn and LiBiZn Das, Sanjib Kumar Fulga, Ion Cosma Dhawan, Rakshanda Kandpal, Hem C. Brink, Jeroen van den Facio, Jorge I. Materials Science Other Condensed Matter Half-Heusler compounds are a class of materials with great potential for the study of distinct electronic states. In this work, we investigate, from first-principles, the possibility of hinge modes in closely related topological phases that are tunable by moderate uni-axial strain. We consider two compounds: LiSbZn and LiBiZn. While LiSbZn has a topologically trivial band structure, the larger spin-orbit coupling of Bi causes a band inversion in LiBiZn. We predict the existence of topologically trivial hinge states in both cases. The hinge modes are affected by both the crystal termination, and the bulk topological phase transitions, albeit indirectly: When present, topological surface modes hybridize with the hinge states and obscure their visibility. Thus, we find that the most visible hinge modes occur when no band inversions are present in the material. Our work highlights the interplay and competition between surface and hinge modes in half-Heuslers, and may help guide the experimental search for robust boundary signatures in these materials. |
| title | Electronic structure and hinge states of strained half-Heusler compounds LiSbZn and LiBiZn |
| topic | Materials Science Other Condensed Matter |
| url | https://arxiv.org/abs/2504.20190 |