Gespeichert in:
| Hauptverfasser: | , , |
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| Format: | Preprint |
| Veröffentlicht: |
2025
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| Schlagworte: | |
| Online-Zugang: | https://arxiv.org/abs/2504.20439 |
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Inhaltsangabe:
- In this article, we present a contact resistivity extraction method calibrated using a de-embedding structure, called High-Resolution Transmission Line Model (HR-TLM). HR-TLM has the similar infrastructure with Refined TLM (RTLM) or Refined-Ladder TLM(R-LTLM), but is optimized for calibration methods. Its advantage lies in maintaining low \r{ho}_c extraction accuracy while significantly reducing the impact of structural process errors. According to the error analysis model, we verify that the extraction accuracy of HR-TLM based on R-LTLM can reach 10-9 Ωcm2 at micron scale lithography precision.