Simulation of radiation damage effect on silicon detectors using RASER
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arXiv
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| Auteurs principaux: | , , , , , , , , , , , , |
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| Format: | Preprint |
| Publié: |
2025
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| _version_ | 1866918241461338112 |
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| author | Li, Xingchen Fu, Chenxi Li, Hui Li, Zhan Zhu, Lin Wang, Congcong Zhang, Xiyuan Song, Weimin Liang, Hui Liu, Cong Wang, Hongbo Shi, Xin Xiao, Suyu |
| author_facet | Li, Xingchen Fu, Chenxi Li, Hui Li, Zhan Zhu, Lin Wang, Congcong Zhang, Xiyuan Song, Weimin Liang, Hui Liu, Cong Wang, Hongbo Shi, Xin Xiao, Suyu |
| contents | Silicon detectors play a crucial role in high energy physics experiments. In future high energy physics experiments, silicon detectors will be exposed to extremely high fluence environment, which can significantly affect their performance. It is important to understand the electrical behavior of detectors after irradiation. In this study, an irradiation simulation framework is constructed in RASER to simulate leakage current and charge collection effciency. The defect parameters are obtained from the Hamburg penta trap model (HPTM). Based on this work, we predict the similar silicon inner tracker which under a ten-year CEPC Higgs mode run can still maintain over 90% charge collection efficiency. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2504_20463 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Simulation of radiation damage effect on silicon detectors using RASER Li, Xingchen Fu, Chenxi Li, Hui Li, Zhan Zhu, Lin Wang, Congcong Zhang, Xiyuan Song, Weimin Liang, Hui Liu, Cong Wang, Hongbo Shi, Xin Xiao, Suyu Instrumentation and Detectors High Energy Physics - Experiment Silicon detectors play a crucial role in high energy physics experiments. In future high energy physics experiments, silicon detectors will be exposed to extremely high fluence environment, which can significantly affect their performance. It is important to understand the electrical behavior of detectors after irradiation. In this study, an irradiation simulation framework is constructed in RASER to simulate leakage current and charge collection effciency. The defect parameters are obtained from the Hamburg penta trap model (HPTM). Based on this work, we predict the similar silicon inner tracker which under a ten-year CEPC Higgs mode run can still maintain over 90% charge collection efficiency. |
| title | Simulation of radiation damage effect on silicon detectors using RASER |
| topic | Instrumentation and Detectors High Energy Physics - Experiment |
| url | https://arxiv.org/abs/2504.20463 |