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| Main Authors: | , , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2504.20796 |
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| _version_ | 1866912353565540352 |
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| author | Lozano, Jorge Pena Griffis, Kindred Aimurzayev, Dimash Wierzba, Gregory Baryshev, Sergey V. |
| author_facet | Lozano, Jorge Pena Griffis, Kindred Aimurzayev, Dimash Wierzba, Gregory Baryshev, Sergey V. |
| contents | The impact semiconductor drift step recovery diodes (DSRDs) can have on high-power microwave applications make them a device of interest for future solid-state electronics. However, there is little known about their functionality and degradation under over-voltaging or high average power dissipation conditions that could therefore hinder their continual design and optimization toward better performance. The experiments on a Si seven layer DSRD conducted in the present paper allowed to broaden the understanding of its opening switching performance under over-voltaging conditions. A striking desynchronization was discovered and linked to junction and electro-neutral region damage through experiments and PSpice modelling. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2504_20796 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Desynchronization in multilayer p-i-n drift step recovery diode Lozano, Jorge Pena Griffis, Kindred Aimurzayev, Dimash Wierzba, Gregory Baryshev, Sergey V. Plasma Physics Materials Science Applied Physics Instrumentation and Detectors The impact semiconductor drift step recovery diodes (DSRDs) can have on high-power microwave applications make them a device of interest for future solid-state electronics. However, there is little known about their functionality and degradation under over-voltaging or high average power dissipation conditions that could therefore hinder their continual design and optimization toward better performance. The experiments on a Si seven layer DSRD conducted in the present paper allowed to broaden the understanding of its opening switching performance under over-voltaging conditions. A striking desynchronization was discovered and linked to junction and electro-neutral region damage through experiments and PSpice modelling. |
| title | Desynchronization in multilayer p-i-n drift step recovery diode |
| topic | Plasma Physics Materials Science Applied Physics Instrumentation and Detectors |
| url | https://arxiv.org/abs/2504.20796 |