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| Main Authors: | , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2504.21105 |
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| _version_ | 1866913812856176640 |
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| author | Johnson, Katherine Newburger, Michael Page, Michael Kawakami, Roland K. |
| author_facet | Johnson, Katherine Newburger, Michael Page, Michael Kawakami, Roland K. |
| contents | Composite multiferroics consisting of a ferroelectric material interfaced with a ferromagnetic material can function above room temperature and exhibit improved magnetoelectric (ME) coupling compared to single-phase multiferroic materials, making them desirable for applications in energy efficient electronic devices. In this study, we demonstrate electrical side-gate control of magnetoresistance and magnetic anisotropy in single-crystalline ferromagnetic Fe$_{0.75}$Co$_{0.25}$ thin films grown on ferroelectric PMN-PT (001) substrates by molecular beam epitaxy. Fe$_{0.75}$Co$_{0.25}$ is selected due to its large magnetoelastic coupling and low magnetic damping. We find that the magnetoresistance curves of patterned Fe$_{0.75}$Co$_{0.25}$ films are controlled by voltages applied to electrostatic side gates. Angle-dependent magnetoresistance scans reveal that the origin of this effect is strain-mediated variation of the magnetic anisotropy due to piezoelectric effects in the PMN-PT. This electrical control of magnetic properties could serve as a building block for future magnetoelectronic and magnonic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2504_21105 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Electrical Side-Gate Control of Anisotropic Magnetoresistance and Magnetic Anisotropy in a Composite Multiferroic Johnson, Katherine Newburger, Michael Page, Michael Kawakami, Roland K. Materials Science Composite multiferroics consisting of a ferroelectric material interfaced with a ferromagnetic material can function above room temperature and exhibit improved magnetoelectric (ME) coupling compared to single-phase multiferroic materials, making them desirable for applications in energy efficient electronic devices. In this study, we demonstrate electrical side-gate control of magnetoresistance and magnetic anisotropy in single-crystalline ferromagnetic Fe$_{0.75}$Co$_{0.25}$ thin films grown on ferroelectric PMN-PT (001) substrates by molecular beam epitaxy. Fe$_{0.75}$Co$_{0.25}$ is selected due to its large magnetoelastic coupling and low magnetic damping. We find that the magnetoresistance curves of patterned Fe$_{0.75}$Co$_{0.25}$ films are controlled by voltages applied to electrostatic side gates. Angle-dependent magnetoresistance scans reveal that the origin of this effect is strain-mediated variation of the magnetic anisotropy due to piezoelectric effects in the PMN-PT. This electrical control of magnetic properties could serve as a building block for future magnetoelectronic and magnonic devices. |
| title | Electrical Side-Gate Control of Anisotropic Magnetoresistance and Magnetic Anisotropy in a Composite Multiferroic |
| topic | Materials Science |
| url | https://arxiv.org/abs/2504.21105 |