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Quantifying Flat-Band Voltage in Si Metal-Oxide-Semiconductor Structures: An Evaluation via Terahertz Emission Spectroscopy (TES)

Fuente: arXiv

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Detalles Bibliográficos
Autores principales:	Yang, Dongxun, Masayoshi, Tonouchi
Formato:	Preprint
Publicado:	2025
Materias:	Applied Physics
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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