Interlayer Coupling-Induced Quantum Phase Transition in Quantum Anomalous Hall Multilayers
Fuente:
arXiv
Saved in:
| Main Authors: | , , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2025
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866915462742278144 |
|---|---|
| author | Zhou, Ling-Jie Zhuo, Deyi Mei, Ruobing Zhao, Yi-Fan Yang, Kaijie Zhang, Ruoxi Yan, Zijie Tay, Han Chan, Moses H. W. Liu, Chao-Xing Chang, Cui-Zu |
| author_facet | Zhou, Ling-Jie Zhuo, Deyi Mei, Ruobing Zhao, Yi-Fan Yang, Kaijie Zhang, Ruoxi Yan, Zijie Tay, Han Chan, Moses H. W. Liu, Chao-Xing Chang, Cui-Zu |
| contents | A quantum phase transition arises from competition between different ground states and is typically accessed by varying a single physical parameter near absolute zero temperature. The quantum anomalous Hall (QAH) effect with high Chern number C has recently been achieved in magnetic topological insulator (TI) multilayers. In this work, we employ molecular beam epitaxy to synthesize a series of magnetic TI penta-layers by varying the thickness of the middle magnetic TI layer, designated as m quintuple layers. Electrical transport measurements demonstrate a quantum phase transition between C = 1 and C = 2 QAH states. For m 1 and m 2, the sample exhibits the well-quantized C = 1 and C = 2 QAH states, respectively. For 1 m 2, we observe a monotonic decrease in Hall resistance from h/e2 to h/2e2 with increasing m, accompanied by a peak in the longitudinal resistance. The quantum phase transition between C = 1 and C = 2 QAH states is attributed to the weakening of the interlayer coupling between the top and the bottom C = 1 QAH layers. Our findings provide a scalable strategy for engineering QAH devices with a tunable Chern number. This approach enables precise control and enhanced functionality in chiral edge current-based electronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2505_00117 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Interlayer Coupling-Induced Quantum Phase Transition in Quantum Anomalous Hall Multilayers Zhou, Ling-Jie Zhuo, Deyi Mei, Ruobing Zhao, Yi-Fan Yang, Kaijie Zhang, Ruoxi Yan, Zijie Tay, Han Chan, Moses H. W. Liu, Chao-Xing Chang, Cui-Zu Mesoscale and Nanoscale Physics Materials Science A quantum phase transition arises from competition between different ground states and is typically accessed by varying a single physical parameter near absolute zero temperature. The quantum anomalous Hall (QAH) effect with high Chern number C has recently been achieved in magnetic topological insulator (TI) multilayers. In this work, we employ molecular beam epitaxy to synthesize a series of magnetic TI penta-layers by varying the thickness of the middle magnetic TI layer, designated as m quintuple layers. Electrical transport measurements demonstrate a quantum phase transition between C = 1 and C = 2 QAH states. For m 1 and m 2, the sample exhibits the well-quantized C = 1 and C = 2 QAH states, respectively. For 1 m 2, we observe a monotonic decrease in Hall resistance from h/e2 to h/2e2 with increasing m, accompanied by a peak in the longitudinal resistance. The quantum phase transition between C = 1 and C = 2 QAH states is attributed to the weakening of the interlayer coupling between the top and the bottom C = 1 QAH layers. Our findings provide a scalable strategy for engineering QAH devices with a tunable Chern number. This approach enables precise control and enhanced functionality in chiral edge current-based electronic devices. |
| title | Interlayer Coupling-Induced Quantum Phase Transition in Quantum Anomalous Hall Multilayers |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2505.00117 |