Altermagnetic band splitting in 10 nm epitaxial CrSb thin films

Fuente: arXiv
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Autori principali: Santhosh, Sandra, Corbae, Paul, Yanez-Parreno, Wilson J., Ghosh, Supriya, Jensen, Christopher J., Fedorov, Alexei V., Hashimoto, Makoto, Lu, Donghui, Borchers, Julie A., Grutter, Alexander J., Charlton, Timothy R., Islam, Saurav, Richardella, Anthony, Mkhoyan, K. Andre, Palmstrøm, Christopher J., Ou, Yongxi, Samarth, Nitin
Natura: Preprint
Pubblicazione: 2025
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author Santhosh, Sandra
Corbae, Paul
Yanez-Parreno, Wilson J.
Ghosh, Supriya
Jensen, Christopher J.
Fedorov, Alexei V.
Hashimoto, Makoto
Lu, Donghui
Borchers, Julie A.
Grutter, Alexander J.
Charlton, Timothy R.
Islam, Saurav
Richardella, Anthony
Mkhoyan, K. Andre
Palmstrøm, Christopher J.
Ou, Yongxi
Samarth, Nitin
author_facet Santhosh, Sandra
Corbae, Paul
Yanez-Parreno, Wilson J.
Ghosh, Supriya
Jensen, Christopher J.
Fedorov, Alexei V.
Hashimoto, Makoto
Lu, Donghui
Borchers, Julie A.
Grutter, Alexander J.
Charlton, Timothy R.
Islam, Saurav
Richardella, Anthony
Mkhoyan, K. Andre
Palmstrøm, Christopher J.
Ou, Yongxi
Samarth, Nitin
contents Altermagnets are a newly identified family of collinear antiferromagnets with momentum-dependent spin-split band structure of non-relativistic origin, derived from spin-group symmetry-protected crystal structures. Among candidate altermagnets, CrSb is attractive for potential applications because of a large spin-splitting near the Fermi level and a high Neel transition temperature of around 700 K. We use molecular beam epitaxy to synthesize CrSb (0001) thin films with thicknesses ranging from 10 nm to 100 nm. Structural characterization, using reflection high energy electron diffraction, scanning transmission electron microscopy, and X-ray diffraction, demonstrates the growth of epitaxial films with good crystallinity. Polarized neutron reflectometry shows the absence of any net magnetization, consistent with antiferromagnetic order. In vacuo angle resolved photoemission spectroscopy (ARPES) measurements probe the band structure in a previously unexplored regime of film thickness, down to 10 nm. These ARPES measurements show a three-dimensional momentum-dependent band splitting of up to 0.7 eV with g-wave symmetry, consistent with that seen in prior studies of bulk single crystals. The distinct altermagnetic band structure required for potential spin-transport applications survives down to the 10 nm thin film limit at room temperature.
format Preprint
id arxiv_https___arxiv_org_abs_2505_00239
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Altermagnetic band splitting in 10 nm epitaxial CrSb thin films
Santhosh, Sandra
Corbae, Paul
Yanez-Parreno, Wilson J.
Ghosh, Supriya
Jensen, Christopher J.
Fedorov, Alexei V.
Hashimoto, Makoto
Lu, Donghui
Borchers, Julie A.
Grutter, Alexander J.
Charlton, Timothy R.
Islam, Saurav
Richardella, Anthony
Mkhoyan, K. Andre
Palmstrøm, Christopher J.
Ou, Yongxi
Samarth, Nitin
Materials Science
Mesoscale and Nanoscale Physics
Altermagnets are a newly identified family of collinear antiferromagnets with momentum-dependent spin-split band structure of non-relativistic origin, derived from spin-group symmetry-protected crystal structures. Among candidate altermagnets, CrSb is attractive for potential applications because of a large spin-splitting near the Fermi level and a high Neel transition temperature of around 700 K. We use molecular beam epitaxy to synthesize CrSb (0001) thin films with thicknesses ranging from 10 nm to 100 nm. Structural characterization, using reflection high energy electron diffraction, scanning transmission electron microscopy, and X-ray diffraction, demonstrates the growth of epitaxial films with good crystallinity. Polarized neutron reflectometry shows the absence of any net magnetization, consistent with antiferromagnetic order. In vacuo angle resolved photoemission spectroscopy (ARPES) measurements probe the band structure in a previously unexplored regime of film thickness, down to 10 nm. These ARPES measurements show a three-dimensional momentum-dependent band splitting of up to 0.7 eV with g-wave symmetry, consistent with that seen in prior studies of bulk single crystals. The distinct altermagnetic band structure required for potential spin-transport applications survives down to the 10 nm thin film limit at room temperature.
title Altermagnetic band splitting in 10 nm epitaxial CrSb thin films
topic Materials Science
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2505.00239