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| Main Authors: | , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2505.00575 |
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| _version_ | 1866915269031493632 |
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| author | Xie, Mingyu Chen, Ruitian Wu, Jiaze Qiu, Kaiqi Li, Mingqiang Chen, Huicong Huang, Kai Zou, Yu |
| author_facet | Xie, Mingyu Chen, Ruitian Wu, Jiaze Qiu, Kaiqi Li, Mingqiang Chen, Huicong Huang, Kai Zou, Yu |
| contents | The total rate of carrier recombination in semiconductors has conventionally been expressed using an additive model, r_total = Σr_i , which rules out the interactions between carrier recombination pathways. Here we challenge this paradigm by demonstrating pathway competitions using our newly developed light-induced mechanical absorption spectroscopy (LIMAS), which allows us to probe genuine recombination dynamics in semiconductors via mechanical damping. We show that the total recombination rate in zinc sulfide (ZnS), a model semiconductor material, follows a multiplicative weighting model, r_total \propto Πr_i ^(w_i) with Σw_i=1. Under both steady-state and switch-on illuminations, the weighting factors w_i for each recombination pathway-direct, trap-assisted, and sublinear-are dictated by the carrier generation mechanism: (i) interband transition favors direct recombination; (ii) single-defect level-mediated generation promotes trap-assisted recombination; (iii) generation involving multiple saturated defect levels gives rise to sublinear recombination. Upon light switch-off, localized state changes drive a dynamic evolution of w_i, altering pathway competitions. These findings reshape our fundamental understanding of carrier dynamics and provide a new strategy to optimize next-generation optoelectronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2505_00575 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Unveiling competitions between carrier recombination pathways in semiconductors via mechanical damping Xie, Mingyu Chen, Ruitian Wu, Jiaze Qiu, Kaiqi Li, Mingqiang Chen, Huicong Huang, Kai Zou, Yu Materials Science The total rate of carrier recombination in semiconductors has conventionally been expressed using an additive model, r_total = Σr_i , which rules out the interactions between carrier recombination pathways. Here we challenge this paradigm by demonstrating pathway competitions using our newly developed light-induced mechanical absorption spectroscopy (LIMAS), which allows us to probe genuine recombination dynamics in semiconductors via mechanical damping. We show that the total recombination rate in zinc sulfide (ZnS), a model semiconductor material, follows a multiplicative weighting model, r_total \propto Πr_i ^(w_i) with Σw_i=1. Under both steady-state and switch-on illuminations, the weighting factors w_i for each recombination pathway-direct, trap-assisted, and sublinear-are dictated by the carrier generation mechanism: (i) interband transition favors direct recombination; (ii) single-defect level-mediated generation promotes trap-assisted recombination; (iii) generation involving multiple saturated defect levels gives rise to sublinear recombination. Upon light switch-off, localized state changes drive a dynamic evolution of w_i, altering pathway competitions. These findings reshape our fundamental understanding of carrier dynamics and provide a new strategy to optimize next-generation optoelectronic devices. |
| title | Unveiling competitions between carrier recombination pathways in semiconductors via mechanical damping |
| topic | Materials Science |
| url | https://arxiv.org/abs/2505.00575 |