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| Main Authors: | , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2505.00575 |
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Table of Contents:
- The total rate of carrier recombination in semiconductors has conventionally been expressed using an additive model, r_total = Σr_i , which rules out the interactions between carrier recombination pathways. Here we challenge this paradigm by demonstrating pathway competitions using our newly developed light-induced mechanical absorption spectroscopy (LIMAS), which allows us to probe genuine recombination dynamics in semiconductors via mechanical damping. We show that the total recombination rate in zinc sulfide (ZnS), a model semiconductor material, follows a multiplicative weighting model, r_total \propto Πr_i ^(w_i) with Σw_i=1. Under both steady-state and switch-on illuminations, the weighting factors w_i for each recombination pathway-direct, trap-assisted, and sublinear-are dictated by the carrier generation mechanism: (i) interband transition favors direct recombination; (ii) single-defect level-mediated generation promotes trap-assisted recombination; (iii) generation involving multiple saturated defect levels gives rise to sublinear recombination. Upon light switch-off, localized state changes drive a dynamic evolution of w_i, altering pathway competitions. These findings reshape our fundamental understanding of carrier dynamics and provide a new strategy to optimize next-generation optoelectronic devices.