Towards a critical endpoint in the valence fluctuating Eu(Rh$_{1-x}$Co$_{x}$)$_2$Si$_2$ system
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| Main Authors: | , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866918006984015872 |
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| author | Walther, Franziska Ocker, Michelle Kraiker, Alexej Caroca-Canales, Nubia Seiro, Silvia Kliemt, Kristin Krellner, Cornelius |
| author_facet | Walther, Franziska Ocker, Michelle Kraiker, Alexej Caroca-Canales, Nubia Seiro, Silvia Kliemt, Kristin Krellner, Cornelius |
| contents | We report on the successful single crystal growth of pure EuRh${_2}$Si${_2}$ and of Eu(Rh$_{1-x}$Co$_{x}$)$_2$Si$_2$ with $x\leq0.23$ by the flux method. Through Co substitution, EuRh$_2$Si$_2$ can be tuned from stable antiferromagnetism via a valence-transition state towards the valence-crossover regime. From magnetization measurements, we constructed a $B - T$ phase diagram for EuRh${_2}$Si${_2}$ comprising multiple magnetic phases and showing a sizable magnetic anisotropy within the basal plane of the tetragonal unit cell. This indicates a complex antiferromagnetic ground state for $x=0$. By applying positive chemical pressure through the substitution series Eu(Rh$_{1-x}$Co$_{x}$)$_2$Si$_2$, a sharp temperature-induced first-order phase transition is observed in magnetization, resistivity and heat capacity for 0.081 $\leq$ $x$ $\leq$ 0.119. The critical end point of this valence transition is located in the phase diagram in the vicinity of 0.119 $<x_{\rm EDX}<$ 0.166. At higher substitution level, the system reaches a valence-crossover regime. The obtained results are presented in a temperature-substitition phase diagram. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2505_01127 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Towards a critical endpoint in the valence fluctuating Eu(Rh$_{1-x}$Co$_{x}$)$_2$Si$_2$ system Walther, Franziska Ocker, Michelle Kraiker, Alexej Caroca-Canales, Nubia Seiro, Silvia Kliemt, Kristin Krellner, Cornelius Strongly Correlated Electrons We report on the successful single crystal growth of pure EuRh${_2}$Si${_2}$ and of Eu(Rh$_{1-x}$Co$_{x}$)$_2$Si$_2$ with $x\leq0.23$ by the flux method. Through Co substitution, EuRh$_2$Si$_2$ can be tuned from stable antiferromagnetism via a valence-transition state towards the valence-crossover regime. From magnetization measurements, we constructed a $B - T$ phase diagram for EuRh${_2}$Si${_2}$ comprising multiple magnetic phases and showing a sizable magnetic anisotropy within the basal plane of the tetragonal unit cell. This indicates a complex antiferromagnetic ground state for $x=0$. By applying positive chemical pressure through the substitution series Eu(Rh$_{1-x}$Co$_{x}$)$_2$Si$_2$, a sharp temperature-induced first-order phase transition is observed in magnetization, resistivity and heat capacity for 0.081 $\leq$ $x$ $\leq$ 0.119. The critical end point of this valence transition is located in the phase diagram in the vicinity of 0.119 $<x_{\rm EDX}<$ 0.166. At higher substitution level, the system reaches a valence-crossover regime. The obtained results are presented in a temperature-substitition phase diagram. |
| title | Towards a critical endpoint in the valence fluctuating Eu(Rh$_{1-x}$Co$_{x}$)$_2$Si$_2$ system |
| topic | Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2505.01127 |