Stacking-orientation and twist-angle control on integer and fractional Chern insulators in moiré rhombohedral graphene
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| Main Authors: | , , , , , , , , , , , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866917072287563776 |
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| author | Li, Chushan Zheng, Chuanqi Liu, Kai Huang, Ke Sun, Zheng Qiao, Lei Wei, Yifan Zhang, Chenyu Xu, Fan Watanabe, Kenji Taniguchi, Takashi Yang, Hao Guan, Dandan Liu, Liang Wang, Shiyong Li, Yaoyi Zheng, Hao Liu, Canhua Tong, Bingbing Lu, Li Jia, Jinfeng Shi, Zhiwen Liu, Jianpeng Li, Xiao Chen, Guorui Li, Tingxin Liu, Xiaoxue |
| author_facet | Li, Chushan Zheng, Chuanqi Liu, Kai Huang, Ke Sun, Zheng Qiao, Lei Wei, Yifan Zhang, Chenyu Xu, Fan Watanabe, Kenji Taniguchi, Takashi Yang, Hao Guan, Dandan Liu, Liang Wang, Shiyong Li, Yaoyi Zheng, Hao Liu, Canhua Tong, Bingbing Lu, Li Jia, Jinfeng Shi, Zhiwen Liu, Jianpeng Li, Xiao Chen, Guorui Li, Tingxin Liu, Xiaoxue |
| contents | Rhombohedral-stacked multilayer graphene aligned with hexagonal boron nitride has emerged as an excellent platform for investigating exotic quantum phenomena arising from the interplay between electron correlations and nontrivial topology. However, the microscopic mechanism governing the emergence of both the integer and fractional Chern insulator states in this system remains an open question. In this work, we systematically investigate the electrical transport properties of RMG/hBN moiré devices with controlled alignment orientations and twist angles. We demonstrate that alignment orientation strongly modulates correlated phenomena in the moiré-proximal regime, while having negligible influence on the formation of integer and fractional Chern insulators in the moiré-distant regime. Instead, the moiré periodicity, tuned by the twist angle, serves as the key parameter controlling the stability of these correlated topological states in the moiré-distant regime. Furthermore, in the moiré-proximal regime of one specific alignment, we observe anomalous Hall effect and a variety of competing phases near ν = 1, including integer Chern insulator states, extended Chern insulator states, and trivial insulators, whose stability is highly sensitive to both the applied displacement electric field and magnetic field. Our results underscore the critical role of stacking-alignment and twist-angle engineering in exploring novel quantum states based on rhombohedral-stacked multilayer graphene moiré systems. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2505_01767 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Stacking-orientation and twist-angle control on integer and fractional Chern insulators in moiré rhombohedral graphene Li, Chushan Zheng, Chuanqi Liu, Kai Huang, Ke Sun, Zheng Qiao, Lei Wei, Yifan Zhang, Chenyu Xu, Fan Watanabe, Kenji Taniguchi, Takashi Yang, Hao Guan, Dandan Liu, Liang Wang, Shiyong Li, Yaoyi Zheng, Hao Liu, Canhua Tong, Bingbing Lu, Li Jia, Jinfeng Shi, Zhiwen Liu, Jianpeng Li, Xiao Chen, Guorui Li, Tingxin Liu, Xiaoxue Mesoscale and Nanoscale Physics Rhombohedral-stacked multilayer graphene aligned with hexagonal boron nitride has emerged as an excellent platform for investigating exotic quantum phenomena arising from the interplay between electron correlations and nontrivial topology. However, the microscopic mechanism governing the emergence of both the integer and fractional Chern insulator states in this system remains an open question. In this work, we systematically investigate the electrical transport properties of RMG/hBN moiré devices with controlled alignment orientations and twist angles. We demonstrate that alignment orientation strongly modulates correlated phenomena in the moiré-proximal regime, while having negligible influence on the formation of integer and fractional Chern insulators in the moiré-distant regime. Instead, the moiré periodicity, tuned by the twist angle, serves as the key parameter controlling the stability of these correlated topological states in the moiré-distant regime. Furthermore, in the moiré-proximal regime of one specific alignment, we observe anomalous Hall effect and a variety of competing phases near ν = 1, including integer Chern insulator states, extended Chern insulator states, and trivial insulators, whose stability is highly sensitive to both the applied displacement electric field and magnetic field. Our results underscore the critical role of stacking-alignment and twist-angle engineering in exploring novel quantum states based on rhombohedral-stacked multilayer graphene moiré systems. |
| title | Stacking-orientation and twist-angle control on integer and fractional Chern insulators in moiré rhombohedral graphene |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2505.01767 |