Ferroelectric Switching in Hybrid Molecular Beam Epitaxy-Grown BaTiO3 Films
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arXiv
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| Auteurs principaux: | , , , , , , |
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| Format: | Preprint |
| Publié: |
2025
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| _version_ | 1866908349397729280 |
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| author | Manjeshwar, Anusha Kamath Yang, Zhifei Liao, Chin-Hsiang Wen, Jiaxuan Koester, Steven J. James, Richard D. Jalan, Bharat |
| author_facet | Manjeshwar, Anusha Kamath Yang, Zhifei Liao, Chin-Hsiang Wen, Jiaxuan Koester, Steven J. James, Richard D. Jalan, Bharat |
| contents | Molecular beam epitaxy (MBE) is a promising synthesis technique for both heterostructure growth and epitaxial integration of ferroelectric BaTiO3. However, a direct measurement of the remnant polarization (P_r) has not been previously reported in MBE-grown BaTiO3 films. We report the in-situ growth of an all-epitaxial SrRuO3/BaTiO3/SrRuO3 heterostructure on Nb-doped SrTiO3 (001) substrates by hybrid MBE using metal-organic precursors. This capacitor structure consisting of 16 nm SrRuO3/40 nm BaTiO3/16 nm SrRuO3 shows hysteretic polarization-electric field (P-E) curves with P_r = 15 μC cm-2 at frequencies ranging from 500 Hz to 20 kHz, after isolating the intrinsic ferroelectric response from non-ferroelectric contributions using the Positive-Up-Negative-Down (PUND) method. We hypothesize that the asymmetry in switching behavior and current leakage has origins in structural defects. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2505_01905 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Ferroelectric Switching in Hybrid Molecular Beam Epitaxy-Grown BaTiO3 Films Manjeshwar, Anusha Kamath Yang, Zhifei Liao, Chin-Hsiang Wen, Jiaxuan Koester, Steven J. James, Richard D. Jalan, Bharat Materials Science Molecular beam epitaxy (MBE) is a promising synthesis technique for both heterostructure growth and epitaxial integration of ferroelectric BaTiO3. However, a direct measurement of the remnant polarization (P_r) has not been previously reported in MBE-grown BaTiO3 films. We report the in-situ growth of an all-epitaxial SrRuO3/BaTiO3/SrRuO3 heterostructure on Nb-doped SrTiO3 (001) substrates by hybrid MBE using metal-organic precursors. This capacitor structure consisting of 16 nm SrRuO3/40 nm BaTiO3/16 nm SrRuO3 shows hysteretic polarization-electric field (P-E) curves with P_r = 15 μC cm-2 at frequencies ranging from 500 Hz to 20 kHz, after isolating the intrinsic ferroelectric response from non-ferroelectric contributions using the Positive-Up-Negative-Down (PUND) method. We hypothesize that the asymmetry in switching behavior and current leakage has origins in structural defects. |
| title | Ferroelectric Switching in Hybrid Molecular Beam Epitaxy-Grown BaTiO3 Films |
| topic | Materials Science |
| url | https://arxiv.org/abs/2505.01905 |