Content Addressable Memory Design with Reference Resistor for Improved Search Resolution

Fuente: arXiv
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Main Authors: Narla, Siri, Koester, Steven J., Dawley, Rebecca A., Bol, Ageeth A., Kumar, Piyush, Naeemi, Azad
Format: Preprint
Published: 2025
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author Narla, Siri
Koester, Steven J.
Dawley, Rebecca A.
Bol, Ageeth A.
Kumar, Piyush
Naeemi, Azad
author_facet Narla, Siri
Koester, Steven J.
Dawley, Rebecca A.
Bol, Ageeth A.
Kumar, Piyush
Naeemi, Azad
contents Despite the parallel in-memory search capabilities of content addressable memories (CAMs), their use in applications is constrained by their limited resolution that worsens as they are scaled to larger arrays or advanced nodes. In this work we present experimental results for a novel back-end-of-line compatible reference resistive device that can significantly improve the search resolution of CAMs implemented with CMOS and beyond-CMOS technologies to less than or equal to 5-bits.
format Preprint
id arxiv_https___arxiv_org_abs_2505_02285
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Content Addressable Memory Design with Reference Resistor for Improved Search Resolution
Narla, Siri
Koester, Steven J.
Dawley, Rebecca A.
Bol, Ageeth A.
Kumar, Piyush
Naeemi, Azad
Emerging Technologies
Hardware Architecture
Despite the parallel in-memory search capabilities of content addressable memories (CAMs), their use in applications is constrained by their limited resolution that worsens as they are scaled to larger arrays or advanced nodes. In this work we present experimental results for a novel back-end-of-line compatible reference resistive device that can significantly improve the search resolution of CAMs implemented with CMOS and beyond-CMOS technologies to less than or equal to 5-bits.
title Content Addressable Memory Design with Reference Resistor for Improved Search Resolution
topic Emerging Technologies
Hardware Architecture
url https://arxiv.org/abs/2505.02285