Electron density modulation in monolayer $MoS_{2}$ along the phase transition of a relaxor ferroelectric substrate
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arXiv
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| Auteurs principaux: | , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866908350257561600 |
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| author | Hernández-Pinilla, D. Cachago, D. Xia, Y. A. López-Polín, G. Ramírez, M. O Bausá, L. E. |
| author_facet | Hernández-Pinilla, D. Cachago, D. Xia, Y. A. López-Polín, G. Ramírez, M. O Bausá, L. E. |
| contents | The integration of transition metal dichalcogenides (TMDs) with ferroelectric substrates is a powerful strategy to modulate their electronic and optical properties. However, the use of relaxor ferroelectrics for this purpose remains unexplored. Here, we demonstrate a reversible photoluminescence (PL) and charge density modulation of monolayer $MoS_{2}$ on a $Sr_{0.61}Ba_{0.39}Nb_{2}O_{6}$ (SBN) substrate, a prototypical relaxor ferroelectric. The smearing of the phase transition in SBN enables continuous tuning of $MoS_{2}$ electronic properties over a broad temperature range ($30-90°C$). A pronounced PL enhancement occurs as the substrate transitions from ferro-to-paraelectric phase due to the vanishing spontaneous polarization and the consequent change in charge balance at the $MoS_{2}-SBN$ interface. Moreover, thermal hysteresis in the electron density modulation is observed during heating and cooling cycles. These findings highlight the potential of relaxor ferroelectrics as reconfigurable platforms for electron doping and light-emission control in 2D materials, opening avenues for temperature-responsive optoelectronic and nanophotonic applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2505_02454 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Electron density modulation in monolayer $MoS_{2}$ along the phase transition of a relaxor ferroelectric substrate Hernández-Pinilla, D. Cachago, D. Xia, Y. A. López-Polín, G. Ramírez, M. O Bausá, L. E. Materials Science Mesoscale and Nanoscale Physics The integration of transition metal dichalcogenides (TMDs) with ferroelectric substrates is a powerful strategy to modulate their electronic and optical properties. However, the use of relaxor ferroelectrics for this purpose remains unexplored. Here, we demonstrate a reversible photoluminescence (PL) and charge density modulation of monolayer $MoS_{2}$ on a $Sr_{0.61}Ba_{0.39}Nb_{2}O_{6}$ (SBN) substrate, a prototypical relaxor ferroelectric. The smearing of the phase transition in SBN enables continuous tuning of $MoS_{2}$ electronic properties over a broad temperature range ($30-90°C$). A pronounced PL enhancement occurs as the substrate transitions from ferro-to-paraelectric phase due to the vanishing spontaneous polarization and the consequent change in charge balance at the $MoS_{2}-SBN$ interface. Moreover, thermal hysteresis in the electron density modulation is observed during heating and cooling cycles. These findings highlight the potential of relaxor ferroelectrics as reconfigurable platforms for electron doping and light-emission control in 2D materials, opening avenues for temperature-responsive optoelectronic and nanophotonic applications. |
| title | Electron density modulation in monolayer $MoS_{2}$ along the phase transition of a relaxor ferroelectric substrate |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2505.02454 |