Theoretical limits of electron and hole doping in single layer graphene from DFT calculations

Fuente: arXiv
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Hauptverfasser: Ciszewski, Dawid, Grochala, Wojciech
Format: Preprint
Veröffentlicht: 2025
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author Ciszewski, Dawid
Grochala, Wojciech
author_facet Ciszewski, Dawid
Grochala, Wojciech
contents Density functional theory calculations suggest a pronounced hole electron doping asymmetry in a single layer graphene. It turns out that a single graphene sheet can sustain doping levels up to 0.1 holes or up to a remarkably large 1.9 electrons per atom while maintaining dynamical [phonon] stability. Estimates of the superconducting critical temperature in the electron doped regime based on McMillans formula reveal two local maxima in the function of doping level which correlate with the local maxima of the electron phonon coupling constant.
format Preprint
id arxiv_https___arxiv_org_abs_2505_02473
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Theoretical limits of electron and hole doping in single layer graphene from DFT calculations
Ciszewski, Dawid
Grochala, Wojciech
Superconductivity
Materials Science
Density functional theory calculations suggest a pronounced hole electron doping asymmetry in a single layer graphene. It turns out that a single graphene sheet can sustain doping levels up to 0.1 holes or up to a remarkably large 1.9 electrons per atom while maintaining dynamical [phonon] stability. Estimates of the superconducting critical temperature in the electron doped regime based on McMillans formula reveal two local maxima in the function of doping level which correlate with the local maxima of the electron phonon coupling constant.
title Theoretical limits of electron and hole doping in single layer graphene from DFT calculations
topic Superconductivity
Materials Science
url https://arxiv.org/abs/2505.02473