Integrated Silicon Nitride Devices via Inverse Design
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arXiv
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| Format: | Preprint |
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2025
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| _version_ | 1866913943246602240 |
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| author | Ruiz, Julian L. Pita Dalvand, Narges Ménard, Michaël |
| author_facet | Ruiz, Julian L. Pita Dalvand, Narges Ménard, Michaël |
| contents | Integrated photonic devices made of silicon nitride (SiN), which can be integrated with silicon-on-insulator and III-V platforms, are expected to drive the expansion of silicon photonics technology. However, the relatively low refractive index contrast of SiN is often considered a limitation for creating compact and efficient devices. Here, we present three freeform SiN devices-a coarse wavelength-division multiplexer, a five-mode mode-division multiplexer, and a polarization beam splitter-while systematically benchmarking both the design capability and the fabrication repeatability and robustness of inverse-designed components. We demonstrate up to a 1200x reduction in footprint while maintaining relatively large minimum feature sizes of up to 160 nm, showing that inverse-designed SiN devices can be as compact as their silicon counterparts. These results enable high-density integration in SiN photonics and pave the way for multidimensional data transmission and quantum applications, as the inverse design technique can be applied to different SiN thicknesses and is potentially extendable to other low- and mid-index platforms. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2505_02662 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Integrated Silicon Nitride Devices via Inverse Design Ruiz, Julian L. Pita Dalvand, Narges Ménard, Michaël Optics Applied Physics Integrated photonic devices made of silicon nitride (SiN), which can be integrated with silicon-on-insulator and III-V platforms, are expected to drive the expansion of silicon photonics technology. However, the relatively low refractive index contrast of SiN is often considered a limitation for creating compact and efficient devices. Here, we present three freeform SiN devices-a coarse wavelength-division multiplexer, a five-mode mode-division multiplexer, and a polarization beam splitter-while systematically benchmarking both the design capability and the fabrication repeatability and robustness of inverse-designed components. We demonstrate up to a 1200x reduction in footprint while maintaining relatively large minimum feature sizes of up to 160 nm, showing that inverse-designed SiN devices can be as compact as their silicon counterparts. These results enable high-density integration in SiN photonics and pave the way for multidimensional data transmission and quantum applications, as the inverse design technique can be applied to different SiN thicknesses and is potentially extendable to other low- and mid-index platforms. |
| title | Integrated Silicon Nitride Devices via Inverse Design |
| topic | Optics Applied Physics |
| url | https://arxiv.org/abs/2505.02662 |