Doping-induced Spin Reorientation in Kagome Magnet TmMn6Sn6
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arXiv
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| Main Authors: | , , , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866915274063609856 |
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| author | Gazzah, Mohamed El Chang, Po-Hao Lee, Y. Bhandari, Hari Regmi, Resham Zhou, Xiuqan Mitchell, John F. Ke, Liqin Mazin, Igor I. Ghimire, Nirmal J. |
| author_facet | Gazzah, Mohamed El Chang, Po-Hao Lee, Y. Bhandari, Hari Regmi, Resham Zhou, Xiuqan Mitchell, John F. Ke, Liqin Mazin, Igor I. Ghimire, Nirmal J. |
| contents | The kagome-lattice compounds RMn6Sn6 (R is a rare earth element), where the Mn atoms form a kagome net in the basal plane, are currently attracting a great deal of attention as they have been shown to host complex magnetic textures and electronic topological states strongly sensitive to the choice of the R atom. Among the magnetic R atoms, TmMn6Sn6 orders with the easy-plane magnetization forming a complex magnetic spiral along the c-axis. Previous neutron studies, carried on polycrystalline, samples found that Ga doping changes the magnetic anisotropy from easy-plane to easy-axis. Here we present magnetic and magnetotransport measurements on a single crystal and first principles calculations in the doping series of TmMn6Sn6-xGax. We find that the magnetic properties are highly sensitive even to a small concentration of Ga. With minimal Ga substitution, the easy-plane anisotropy is maintained, which gradually changes to the easy-axis anisotropy with increasing Ga. We discuss these observations with respect to the effect of Ga doping on magnetocrystalline anisotropy and Tm crystal field |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2505_02936 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Doping-induced Spin Reorientation in Kagome Magnet TmMn6Sn6 Gazzah, Mohamed El Chang, Po-Hao Lee, Y. Bhandari, Hari Regmi, Resham Zhou, Xiuqan Mitchell, John F. Ke, Liqin Mazin, Igor I. Ghimire, Nirmal J. Materials Science The kagome-lattice compounds RMn6Sn6 (R is a rare earth element), where the Mn atoms form a kagome net in the basal plane, are currently attracting a great deal of attention as they have been shown to host complex magnetic textures and electronic topological states strongly sensitive to the choice of the R atom. Among the magnetic R atoms, TmMn6Sn6 orders with the easy-plane magnetization forming a complex magnetic spiral along the c-axis. Previous neutron studies, carried on polycrystalline, samples found that Ga doping changes the magnetic anisotropy from easy-plane to easy-axis. Here we present magnetic and magnetotransport measurements on a single crystal and first principles calculations in the doping series of TmMn6Sn6-xGax. We find that the magnetic properties are highly sensitive even to a small concentration of Ga. With minimal Ga substitution, the easy-plane anisotropy is maintained, which gradually changes to the easy-axis anisotropy with increasing Ga. We discuss these observations with respect to the effect of Ga doping on magnetocrystalline anisotropy and Tm crystal field |
| title | Doping-induced Spin Reorientation in Kagome Magnet TmMn6Sn6 |
| topic | Materials Science |
| url | https://arxiv.org/abs/2505.02936 |