Defect-Bound Excitons in Topological Materials

Fuente: arXiv
Salvato in:
Dettagli Bibliografici
Autori principali: Skiff, Roni Majlin, Refaely-Abramson, Sivan, Queiroz, Raquel, Ilan, Roni
Natura: Preprint
Pubblicazione: 2025
Soggetti:
Accesso online:
Tags: Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
_version_ 1866918011328266240
author Skiff, Roni Majlin
Refaely-Abramson, Sivan
Queiroz, Raquel
Ilan, Roni
author_facet Skiff, Roni Majlin
Refaely-Abramson, Sivan
Queiroz, Raquel
Ilan, Roni
contents Excitons, bound states of electrons and holes, are affected by the properties of the underlying band structure of a material. Defects in lattice systems may trap electronic defect states, to which an electron can be excited to form defect-bound excitons. Here, we examine the effect of band topology on excitons in systems with a single-site defect. We show that in the topological phase, when robust, in-gap, ring-shaped electronic states appear around defects, excitons inherit the properties of these ring states: The excitons' binding energies are lowered as a result of the wide spatial profile of the defect state, and their wave functions have complex shapes and order due to the mixed orbital character of the topological bands. Our study advances the understanding of the role of topology in modifying and controlling defect-bound excitons in quantum materials.
format Preprint
id arxiv_https___arxiv_org_abs_2505_03343
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Defect-Bound Excitons in Topological Materials
Skiff, Roni Majlin
Refaely-Abramson, Sivan
Queiroz, Raquel
Ilan, Roni
Mesoscale and Nanoscale Physics
Excitons, bound states of electrons and holes, are affected by the properties of the underlying band structure of a material. Defects in lattice systems may trap electronic defect states, to which an electron can be excited to form defect-bound excitons. Here, we examine the effect of band topology on excitons in systems with a single-site defect. We show that in the topological phase, when robust, in-gap, ring-shaped electronic states appear around defects, excitons inherit the properties of these ring states: The excitons' binding energies are lowered as a result of the wide spatial profile of the defect state, and their wave functions have complex shapes and order due to the mixed orbital character of the topological bands. Our study advances the understanding of the role of topology in modifying and controlling defect-bound excitons in quantum materials.
title Defect-Bound Excitons in Topological Materials
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2505.03343