Direct Bandgap Photoluminescence of GeSn grown on Si(100) substrate by Molecular Beam Epitaxy Growth

Fuente: arXiv

Saved in:

Bibliographic Details
Main Authors:	Zhang, Diandian, Eldose, Nirosh M., Baral, Dinesh, Stanchu, Hryhorii, Acharya, Sudip, de Oliveira, Fernando Maia, Benamara, Mourad, Zhao, Haochen, Zeng, Yuping, Du, Wei, Salamo, Gregory J., Yu, Shui-Qing
Format:	Preprint
Published:	2025
Subjects:	Applied Physics Materials Science
Online Access:	Acceder al recurso
Tags:	Add Tag No Tags, Be the first to tag this record!

Internet

https://arxiv.org/abs/2505.04096