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Direct Bandgap Photoluminescence of GeSn grown on Si(100) substrate by Molecular Beam Epitaxy Growth

Fuente: arXiv

Salvato in:

Dettagli Bibliografici
Autori principali:	Zhang, Diandian, Eldose, Nirosh M., Baral, Dinesh, Stanchu, Hryhorii, Acharya, Sudip, de Oliveira, Fernando Maia, Benamara, Mourad, Zhao, Haochen, Zeng, Yuping, Du, Wei, Salamo, Gregory J., Yu, Shui-Qing
Natura:	Preprint
Pubblicazione:	2025
Soggetti:	Applied Physics Materials Science
Accesso online:	Acceder al recurso
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