Spin-valve effect for spin-polarized surface states in topological semimetals
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arXiv
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| Format: | Preprint |
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2025
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| author | Avakyants, A. A. Esin, V. D. Kazmin, D. Yu. Orlova, N. N. Timonina, A. V. Kolesnikov, N. N. Deviatov, E. V. |
| author_facet | Avakyants, A. A. Esin, V. D. Kazmin, D. Yu. Orlova, N. N. Timonina, A. V. Kolesnikov, N. N. Deviatov, E. V. |
| contents | We experimentally investigate magnetoresistance of a single GeTe-Ni junction between the $α$-GeTe topological semimetal and thick nickel film at room and liquid helium temperatures. For the magnetic field parallel to the junction plane, we demonstrate characteristic spin-valve hysteresis with mirrored differential resistance $dV/dI$ peaks even at room temperature. In contrast, for normal magnetic fields spin-valve effect appears only at low temperatures. From the magnetic field anisotropy, observation of the similar effect for another topological semimetal Cd$_3$As$_2$, and strictly flat $dV/dI(H)$ magnetoresistance curves for the reference GeTe-Au junction, we connect the observed spin-valve effect with the spin-dependent scattering between the spin textures in the topological surface states and the ferromagnetic nickel electrode. For the topological semimetal $α$-GeTe, room-temperature spin-valve effect allows efficient spin-to-charge conversion even at ambient conditions. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2505_04244 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Spin-valve effect for spin-polarized surface states in topological semimetals Avakyants, A. A. Esin, V. D. Kazmin, D. Yu. Orlova, N. N. Timonina, A. V. Kolesnikov, N. N. Deviatov, E. V. Mesoscale and Nanoscale Physics We experimentally investigate magnetoresistance of a single GeTe-Ni junction between the $α$-GeTe topological semimetal and thick nickel film at room and liquid helium temperatures. For the magnetic field parallel to the junction plane, we demonstrate characteristic spin-valve hysteresis with mirrored differential resistance $dV/dI$ peaks even at room temperature. In contrast, for normal magnetic fields spin-valve effect appears only at low temperatures. From the magnetic field anisotropy, observation of the similar effect for another topological semimetal Cd$_3$As$_2$, and strictly flat $dV/dI(H)$ magnetoresistance curves for the reference GeTe-Au junction, we connect the observed spin-valve effect with the spin-dependent scattering between the spin textures in the topological surface states and the ferromagnetic nickel electrode. For the topological semimetal $α$-GeTe, room-temperature spin-valve effect allows efficient spin-to-charge conversion even at ambient conditions. |
| title | Spin-valve effect for spin-polarized surface states in topological semimetals |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2505.04244 |