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| Main Authors: | , , , , , , , , , , |
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| Format: | Preprint |
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2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2505.04400 |
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| _version_ | 1866912540429123584 |
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| author | Liu, Huanyu Li, Wenhui Zhou, Zishu Qu, Hongbin Zhang, Jiaqi Hu, Weixiong Wen, Chenhaoping Wang, Ning Deng, Hao Li, Gang Yan, Shichao |
| author_facet | Liu, Huanyu Li, Wenhui Zhou, Zishu Qu, Hongbin Zhang, Jiaqi Hu, Weixiong Wen, Chenhaoping Wang, Ning Deng, Hao Li, Gang Yan, Shichao |
| contents | We report direct spectroscopic evidence of correlation-driven Mott states in layered Nb$_3$Cl$_8$ through combining scanning tunneling microscopy (STM) and dynamical mean-field theory. The Hubbard bands persist down to monolayer, providing the definitive evidence for the Mottness in Nb$_3$Cl$_8$. While the size of the Mott gap remains almost constant across all layers, a striking layer-parity-dependent oscillation emerges in the local density of states (LDOS) between even (n = 2,4,6) and odd layers (n = 1,3,5), which arises from the dimerization and correlation modulation of the obstructed atomic states, respectively. Our conclusions are supported by a critical technical advance in atomic-scale LDOS mapping for highly insulating systems. This work provides the definitive experimental verification of correlation-driven Mott ground states in Nb3Cl8 while establishing a general protocol for investigating the interplay of electronic correlation and interlayer coupling in layered insulators by using low-temperature STM technique. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2505_04400 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Direct evidence of intrinsic Mott state and its layer-parity oscillation in a breathing kagome crystal down to monolayer Liu, Huanyu Li, Wenhui Zhou, Zishu Qu, Hongbin Zhang, Jiaqi Hu, Weixiong Wen, Chenhaoping Wang, Ning Deng, Hao Li, Gang Yan, Shichao Strongly Correlated Electrons Mesoscale and Nanoscale Physics We report direct spectroscopic evidence of correlation-driven Mott states in layered Nb$_3$Cl$_8$ through combining scanning tunneling microscopy (STM) and dynamical mean-field theory. The Hubbard bands persist down to monolayer, providing the definitive evidence for the Mottness in Nb$_3$Cl$_8$. While the size of the Mott gap remains almost constant across all layers, a striking layer-parity-dependent oscillation emerges in the local density of states (LDOS) between even (n = 2,4,6) and odd layers (n = 1,3,5), which arises from the dimerization and correlation modulation of the obstructed atomic states, respectively. Our conclusions are supported by a critical technical advance in atomic-scale LDOS mapping for highly insulating systems. This work provides the definitive experimental verification of correlation-driven Mott ground states in Nb3Cl8 while establishing a general protocol for investigating the interplay of electronic correlation and interlayer coupling in layered insulators by using low-temperature STM technique. |
| title | Direct evidence of intrinsic Mott state and its layer-parity oscillation in a breathing kagome crystal down to monolayer |
| topic | Strongly Correlated Electrons Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2505.04400 |