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| Main Authors: | , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2505.04400 |
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Table of Contents:
- We report direct spectroscopic evidence of correlation-driven Mott states in layered Nb$_3$Cl$_8$ through combining scanning tunneling microscopy (STM) and dynamical mean-field theory. The Hubbard bands persist down to monolayer, providing the definitive evidence for the Mottness in Nb$_3$Cl$_8$. While the size of the Mott gap remains almost constant across all layers, a striking layer-parity-dependent oscillation emerges in the local density of states (LDOS) between even (n = 2,4,6) and odd layers (n = 1,3,5), which arises from the dimerization and correlation modulation of the obstructed atomic states, respectively. Our conclusions are supported by a critical technical advance in atomic-scale LDOS mapping for highly insulating systems. This work provides the definitive experimental verification of correlation-driven Mott ground states in Nb3Cl8 while establishing a general protocol for investigating the interplay of electronic correlation and interlayer coupling in layered insulators by using low-temperature STM technique.