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TBA-enabled spin-coating of a percolatively connected GO nanosieve for thru-hole epitaxy: tuning GO flake stacking and coverage to control GaN nucleation

Fuente: arXiv

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Détails bibliographiques
Auteurs principaux:	Beak, Gunhoon, Dong, Changwook, Choi, Minah, Yang, Jieun, Lim, Joonwon, Kim, Chinkyo
Format:	Preprint
Publié:	2025
Sujets:	Materials Science Applied Physics
Accès en ligne:	Acceder al recurso
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

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