Engineering topological exciton structures in two-dimensional semiconductors by a periodic electrostatic potential

Fuente: arXiv
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Autori principali: Zhang, Na, Yao, Wang, Yu, Hongyi
Natura: Preprint
Pubblicazione: 2025
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author Zhang, Na
Yao, Wang
Yu, Hongyi
author_facet Zhang, Na
Yao, Wang
Yu, Hongyi
contents We propose to engineer topological exciton structures in layered transition metal dichalcogenides through hybridizing different Rydberg states, which can be induced by a periodic electrostatic potential remotely imprinted from charge distributions in adjacent layers. Topological phase diagrams are obtained for potentials with various strengths and wavelengths. We find the lowest band of the interlayer exciton can become topologically nontrivial, which exhibits a small bandwidth as well as quantum geometries well suited for realizing the bosonic fractional Chern insulator. For monolayer excitons, topological bands and in-gap helical edge states can emerge near the energy of 2p states.
format Preprint
id arxiv_https___arxiv_org_abs_2505_04597
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Engineering topological exciton structures in two-dimensional semiconductors by a periodic electrostatic potential
Zhang, Na
Yao, Wang
Yu, Hongyi
Mesoscale and Nanoscale Physics
We propose to engineer topological exciton structures in layered transition metal dichalcogenides through hybridizing different Rydberg states, which can be induced by a periodic electrostatic potential remotely imprinted from charge distributions in adjacent layers. Topological phase diagrams are obtained for potentials with various strengths and wavelengths. We find the lowest band of the interlayer exciton can become topologically nontrivial, which exhibits a small bandwidth as well as quantum geometries well suited for realizing the bosonic fractional Chern insulator. For monolayer excitons, topological bands and in-gap helical edge states can emerge near the energy of 2p states.
title Engineering topological exciton structures in two-dimensional semiconductors by a periodic electrostatic potential
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2505.04597