Giant Tunneling Magnetoresistance in Graphene/$h$-BN Based van der Waals Magnetic Tunnel Junctions via 3$d$ Transition Metal Intercalation
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arXiv
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| Autores principales: | , , , , |
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| Formato: | Preprint |
| Publicado: |
2025
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| _version_ | 1866918013109796864 |
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| author | Yan, Zhi Xiao, Jianhua Zhang, Xujin Fang, Cheng Xu, Xiaohong |
| author_facet | Yan, Zhi Xiao, Jianhua Zhang, Xujin Fang, Cheng Xu, Xiaohong |
| contents | Atomic intercalation offers a powerful route for engineering two-dimensional (2D) materials by precisely tuning interlayer electronic coupling and spin configurations. Here, we propose a generic strategy for the construction of fully 2D magnetic tunnel junctions (MTJs) based on transition metal-intercalated graphene electrodes with $h$-BN barrier layer. First-principles calculations reveal that intercalation not only stabilizes uniform atomic dispersion via steric hindrance but also induces robust ferromagnetism in graphene. Manganese- and vanadium-intercalated systems (Mn-Gr and V-Gr) exhibit exceptional spintronic performance, with tunneling magnetoresistance (TMR) showing a pronounced odd-even oscillation as a function of barrier thickness. A giant TMR of $4.35 \times 10^8\,\%$ is achieved in the Mn-Gr system with a monolayer barrier $h$ -BN ($n=1$), while V-Gr reaches a maximum TMR of $1.86 \times 10^5\,\%$ for a trilayer barrier ($n=3$). Moreover, biaxial strain further enhances the TMR to $10^9\,\%$ and $10^7\,\%$ in Mn-Gr and V-Gr systems, respectively. The devices also exhibit perfect spin filtering and pronounced negative differential resistance, offering new opportunities for high-performance spintronic and memory applications based on 2D van der Waals heterostructures. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2505_04878 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Giant Tunneling Magnetoresistance in Graphene/$h$-BN Based van der Waals Magnetic Tunnel Junctions via 3$d$ Transition Metal Intercalation Yan, Zhi Xiao, Jianhua Zhang, Xujin Fang, Cheng Xu, Xiaohong Materials Science Applied Physics Quantum Physics Atomic intercalation offers a powerful route for engineering two-dimensional (2D) materials by precisely tuning interlayer electronic coupling and spin configurations. Here, we propose a generic strategy for the construction of fully 2D magnetic tunnel junctions (MTJs) based on transition metal-intercalated graphene electrodes with $h$-BN barrier layer. First-principles calculations reveal that intercalation not only stabilizes uniform atomic dispersion via steric hindrance but also induces robust ferromagnetism in graphene. Manganese- and vanadium-intercalated systems (Mn-Gr and V-Gr) exhibit exceptional spintronic performance, with tunneling magnetoresistance (TMR) showing a pronounced odd-even oscillation as a function of barrier thickness. A giant TMR of $4.35 \times 10^8\,\%$ is achieved in the Mn-Gr system with a monolayer barrier $h$ -BN ($n=1$), while V-Gr reaches a maximum TMR of $1.86 \times 10^5\,\%$ for a trilayer barrier ($n=3$). Moreover, biaxial strain further enhances the TMR to $10^9\,\%$ and $10^7\,\%$ in Mn-Gr and V-Gr systems, respectively. The devices also exhibit perfect spin filtering and pronounced negative differential resistance, offering new opportunities for high-performance spintronic and memory applications based on 2D van der Waals heterostructures. |
| title | Giant Tunneling Magnetoresistance in Graphene/$h$-BN Based van der Waals Magnetic Tunnel Junctions via 3$d$ Transition Metal Intercalation |
| topic | Materials Science Applied Physics Quantum Physics |
| url | https://arxiv.org/abs/2505.04878 |