Ablation of black-Si by (Gauss-)Bessel femtosecond laser beams
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arXiv
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| Autori principali: | , , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| _version_ | 1866912366714683392 |
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| author | Zheng, Nan Huang, Hsin-Hui Le, Nguyen Hoai An Katkus, Tomas Mu, Haoran Ng, Soon Hock Ranaweera, Thumula Gailevicius, Darius Stonyte, Dominyka Juodkazis, Saulius |
| author_facet | Zheng, Nan Huang, Hsin-Hui Le, Nguyen Hoai An Katkus, Tomas Mu, Haoran Ng, Soon Hock Ranaweera, Thumula Gailevicius, Darius Stonyte, Dominyka Juodkazis, Saulius |
| contents | Laser machining and modification of black-Si (b-Si) by femtosecond laser Gaussian (G-) and Gauss-Bessel (GB-) beams are compared at a wavelength of 1030 nm. The GB-beam was generated using a diffractive axicon lens and 10x demagnification optics. It was found that modification of b-Si well below (a factor 50x) the single pulse ablation fluence of 0.2 J/cm2 was possible, corresponding to ablation/melting of nano-needles. The width of modification was almost independent of pulse energy/fluence and had a width of 1/e2-intensity profile at the melting regime. For the GB-beam, the smallest width of laser modification at 0.2 J/cm2 threshold (at the center core) was close to the FWHM of the core of the GB-beam. The aspect ratio of the ablated groove on the surface of b-Si made by GB-beam was twice as large - up to 8 - compared to that achievable with G-beam, and it was at a lower fluence of 4 J/cm2 (50x reduction). Reflectivity of two-side nanotextured b-Si on plasma-thinned 70-micrometers thick Si was strongly reduced in the near-IR range, reaching transmittance >95% at 1.7-2.1 micrometres wavelengths. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2505_05263 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Ablation of black-Si by (Gauss-)Bessel femtosecond laser beams Zheng, Nan Huang, Hsin-Hui Le, Nguyen Hoai An Katkus, Tomas Mu, Haoran Ng, Soon Hock Ranaweera, Thumula Gailevicius, Darius Stonyte, Dominyka Juodkazis, Saulius Optics Applied Physics Laser machining and modification of black-Si (b-Si) by femtosecond laser Gaussian (G-) and Gauss-Bessel (GB-) beams are compared at a wavelength of 1030 nm. The GB-beam was generated using a diffractive axicon lens and 10x demagnification optics. It was found that modification of b-Si well below (a factor 50x) the single pulse ablation fluence of 0.2 J/cm2 was possible, corresponding to ablation/melting of nano-needles. The width of modification was almost independent of pulse energy/fluence and had a width of 1/e2-intensity profile at the melting regime. For the GB-beam, the smallest width of laser modification at 0.2 J/cm2 threshold (at the center core) was close to the FWHM of the core of the GB-beam. The aspect ratio of the ablated groove on the surface of b-Si made by GB-beam was twice as large - up to 8 - compared to that achievable with G-beam, and it was at a lower fluence of 4 J/cm2 (50x reduction). Reflectivity of two-side nanotextured b-Si on plasma-thinned 70-micrometers thick Si was strongly reduced in the near-IR range, reaching transmittance >95% at 1.7-2.1 micrometres wavelengths. |
| title | Ablation of black-Si by (Gauss-)Bessel femtosecond laser beams |
| topic | Optics Applied Physics |
| url | https://arxiv.org/abs/2505.05263 |