Size dependence of the properties of synthetic-antiferromagnet-based stochastic magnetic tunnel junctions for probabilistic computing

Fuente: arXiv
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Hauptverfasser: Kinoshita, Takuma, Yoon, Ju-Young, Caçoilo, Nuno, Mochizuki, Ryota, Kaneko, Haruna, Kanai, Shun, Ohno, Hideo, Fukami, Shunsuke
Format: Preprint
Veröffentlicht: 2025
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author Kinoshita, Takuma
Yoon, Ju-Young
Caçoilo, Nuno
Mochizuki, Ryota
Kaneko, Haruna
Kanai, Shun
Ohno, Hideo
Fukami, Shunsuke
author_facet Kinoshita, Takuma
Yoon, Ju-Young
Caçoilo, Nuno
Mochizuki, Ryota
Kaneko, Haruna
Kanai, Shun
Ohno, Hideo
Fukami, Shunsuke
contents Stochastic magnetic tunnel junctions (s-MTJs) are core components for spintronics-based probabilistic computing (p-computing), a promising candidate for energy-efficient unconventional computing. To achieve reliable performance under practical conditions, the use of a synthetic antiferromagnetic (SAF) free-layer configuration was proposed due to its enhanced tolerance to magnetic field perturbations. For engineering the SAF s-MTJs, we systematically investigate the properties of the SAF s-MTJs as a function of the junction size. We observe that decreasing junction size leads to shorter relaxation times, enhanced magnetic field robustness, and enhanced insensitivity to bias voltage. These findings provide key insights toward high-performance p-computers with reliable operation.
format Preprint
id arxiv_https___arxiv_org_abs_2505_05316
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Size dependence of the properties of synthetic-antiferromagnet-based stochastic magnetic tunnel junctions for probabilistic computing
Kinoshita, Takuma
Yoon, Ju-Young
Caçoilo, Nuno
Mochizuki, Ryota
Kaneko, Haruna
Kanai, Shun
Ohno, Hideo
Fukami, Shunsuke
Applied Physics
Mesoscale and Nanoscale Physics
Stochastic magnetic tunnel junctions (s-MTJs) are core components for spintronics-based probabilistic computing (p-computing), a promising candidate for energy-efficient unconventional computing. To achieve reliable performance under practical conditions, the use of a synthetic antiferromagnetic (SAF) free-layer configuration was proposed due to its enhanced tolerance to magnetic field perturbations. For engineering the SAF s-MTJs, we systematically investigate the properties of the SAF s-MTJs as a function of the junction size. We observe that decreasing junction size leads to shorter relaxation times, enhanced magnetic field robustness, and enhanced insensitivity to bias voltage. These findings provide key insights toward high-performance p-computers with reliable operation.
title Size dependence of the properties of synthetic-antiferromagnet-based stochastic magnetic tunnel junctions for probabilistic computing
topic Applied Physics
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2505.05316