Bipolar doping in van der Waals semiconductor through Flexo-doping
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arXiv
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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| _version_ | 1866912367507406848 |
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| author | Zhang, Bo Xia, Hui Huang, Zhengdong Liu, Yaqian Kang, Jun Sun, Liaoxin Li, Tianxin Wei, Su-Huai Lu, Wei |
| author_facet | Zhang, Bo Xia, Hui Huang, Zhengdong Liu, Yaqian Kang, Jun Sun, Liaoxin Li, Tianxin Wei, Su-Huai Lu, Wei |
| contents | Doping plays a key role in functionalizing semiconductor devices, yet traditional chemical approaches relying on foreign-atom incorporation suffer from doping-asymmetry, pronounced lattice disorder and constrained spatial resolution. Here, we demonstrate a physical doping technique to directly write nanoscale doping patterns into layered semiconductors (MoS2). By applying localized tensile and compressive stress via an atomic force microscopy probe, p and n type conductance are simultaneously written into the designed area with sub-100-nm resolution, as verified by spatially resolved capacitance and photocurrent experiments. Density functional theory calculations reveal strain-driven shifts of donor and acceptor levels, as large as several hundreds of meV, linking mechanical stress to semiconductor doping. Fabricated strain-engineered junction efficiently rectifies the current flow and performs logic operations with stable dynamic response. This strain-driven approach enables spatially precise doping in van der Waals materials without degrading crystallinity, offering a versatile platform for nanoscale semiconductor devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2505_05887 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Bipolar doping in van der Waals semiconductor through Flexo-doping Zhang, Bo Xia, Hui Huang, Zhengdong Liu, Yaqian Kang, Jun Sun, Liaoxin Li, Tianxin Wei, Su-Huai Lu, Wei Materials Science Mesoscale and Nanoscale Physics Doping plays a key role in functionalizing semiconductor devices, yet traditional chemical approaches relying on foreign-atom incorporation suffer from doping-asymmetry, pronounced lattice disorder and constrained spatial resolution. Here, we demonstrate a physical doping technique to directly write nanoscale doping patterns into layered semiconductors (MoS2). By applying localized tensile and compressive stress via an atomic force microscopy probe, p and n type conductance are simultaneously written into the designed area with sub-100-nm resolution, as verified by spatially resolved capacitance and photocurrent experiments. Density functional theory calculations reveal strain-driven shifts of donor and acceptor levels, as large as several hundreds of meV, linking mechanical stress to semiconductor doping. Fabricated strain-engineered junction efficiently rectifies the current flow and performs logic operations with stable dynamic response. This strain-driven approach enables spatially precise doping in van der Waals materials without degrading crystallinity, offering a versatile platform for nanoscale semiconductor devices. |
| title | Bipolar doping in van der Waals semiconductor through Flexo-doping |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2505.05887 |