High-Q Millimeter-Wave Acoustic Resonators in Thin-Film Lithium Niobate Using Higher-Order Antisymmetric Modes
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arXiv
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| Format: | Preprint |
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2025
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| author | Chulukhadze, Vakhtang Kramer, Jack Hsu, Tzu-Hsuan Barrera, Omar Lu, Ruochen |
| author_facet | Chulukhadze, Vakhtang Kramer, Jack Hsu, Tzu-Hsuan Barrera, Omar Lu, Ruochen |
| contents | This letter presents miniature millimeter wave (mmWave, above 30 GHz) acoustic resonators based on a single-layer thin-film lithium niobate (LN) platform. More specifically, we present high performance third-order antisymmetric (A3) mode laterally excited bulk acoustic resonators (XBAR). Compared to prior demonstrations, the proposed platform features a compact footprint due to a smaller lateral wavelength and aperture. We showcase an A3 mode device operating at 39.8 GHz with a high extracted electromechanical coupling (k^2) of 4%, a high 3-dB series resonance quality factor (Q_s) of 97, and a high 3-dB anti-resonance quality factor (Q_p) of 342, leading to a figure of merit (FoM=k^2*Q_p) of 13.7 with a footprint of 32x44 micron^2. To demonstrate frequency scalability, the piezoelectric film thickness is varied while keeping the device layout. As a result, we present a multitude of high-performance devices covering a wide frequency range of 30-50 GHz, validating the proposed XBAR design at mmWave. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2505_06247 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | High-Q Millimeter-Wave Acoustic Resonators in Thin-Film Lithium Niobate Using Higher-Order Antisymmetric Modes Chulukhadze, Vakhtang Kramer, Jack Hsu, Tzu-Hsuan Barrera, Omar Lu, Ruochen Applied Physics This letter presents miniature millimeter wave (mmWave, above 30 GHz) acoustic resonators based on a single-layer thin-film lithium niobate (LN) platform. More specifically, we present high performance third-order antisymmetric (A3) mode laterally excited bulk acoustic resonators (XBAR). Compared to prior demonstrations, the proposed platform features a compact footprint due to a smaller lateral wavelength and aperture. We showcase an A3 mode device operating at 39.8 GHz with a high extracted electromechanical coupling (k^2) of 4%, a high 3-dB series resonance quality factor (Q_s) of 97, and a high 3-dB anti-resonance quality factor (Q_p) of 342, leading to a figure of merit (FoM=k^2*Q_p) of 13.7 with a footprint of 32x44 micron^2. To demonstrate frequency scalability, the piezoelectric film thickness is varied while keeping the device layout. As a result, we present a multitude of high-performance devices covering a wide frequency range of 30-50 GHz, validating the proposed XBAR design at mmWave. |
| title | High-Q Millimeter-Wave Acoustic Resonators in Thin-Film Lithium Niobate Using Higher-Order Antisymmetric Modes |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2505.06247 |