Results from a 2nd production run of low temperature wafer-wafer bonded pad-diodes for particle detection
Fuente:
arXiv
Salvato in:
| Autori principali: | , , |
|---|---|
| Natura: | Preprint |
| Pubblicazione: |
2025
|
| Soggetti: | |
| Accesso online: | |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
| _version_ | 1866916794757808128 |
|---|---|
| author | Wüthrich, J. Deplazes, K. Rubbia, A. |
| author_facet | Wüthrich, J. Deplazes, K. Rubbia, A. |
| contents | We are investigating the use of low temperature wafer-wafer bonding in the fabrication of next-generation particle pixel detectors. This bonding technique could enable the integration of fully processed CMOS readout wafers with high-Z absorber materials, facilitating the creation of highly efficient X-ray imaging detectors. It might also facilitate the integration of structures embedded inside the wafer bulk, such as deep uniform gain layers. The bonding process results in a thin (nm-scale) amorphous layer at the bonding interface. To study the impact of this interface on detector operation, we fabricated simple wafer-wafer bonded pad diodes using high resistivity float-zone silicon wafers. Results from a first fabrication run of such diodes revealed that the presence of the bonding interface alters the depletion behaviour, with the interface acting as a heavily doped N++ layer. However, metal contamination of the bonding surfaces during fabrication compromised these results, making them unrepresentative of an ideal bonding interface. In this paper we present the results from a subsequent fabrication run, which does not exhibit this sort of metal contamination. These results confirm that the bonding interface behaves as a heavily doped N++ layer, even without contamination. Further, we discuss the reverse leakage current of the bonded samples, where current vs. voltage measurements show a behaviour which is consistent with current generated within the depletion region of the samples. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2505_07010 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Results from a 2nd production run of low temperature wafer-wafer bonded pad-diodes for particle detection Wüthrich, J. Deplazes, K. Rubbia, A. Instrumentation and Detectors We are investigating the use of low temperature wafer-wafer bonding in the fabrication of next-generation particle pixel detectors. This bonding technique could enable the integration of fully processed CMOS readout wafers with high-Z absorber materials, facilitating the creation of highly efficient X-ray imaging detectors. It might also facilitate the integration of structures embedded inside the wafer bulk, such as deep uniform gain layers. The bonding process results in a thin (nm-scale) amorphous layer at the bonding interface. To study the impact of this interface on detector operation, we fabricated simple wafer-wafer bonded pad diodes using high resistivity float-zone silicon wafers. Results from a first fabrication run of such diodes revealed that the presence of the bonding interface alters the depletion behaviour, with the interface acting as a heavily doped N++ layer. However, metal contamination of the bonding surfaces during fabrication compromised these results, making them unrepresentative of an ideal bonding interface. In this paper we present the results from a subsequent fabrication run, which does not exhibit this sort of metal contamination. These results confirm that the bonding interface behaves as a heavily doped N++ layer, even without contamination. Further, we discuss the reverse leakage current of the bonded samples, where current vs. voltage measurements show a behaviour which is consistent with current generated within the depletion region of the samples. |
| title | Results from a 2nd production run of low temperature wafer-wafer bonded pad-diodes for particle detection |
| topic | Instrumentation and Detectors |
| url | https://arxiv.org/abs/2505.07010 |