All-optical electric field sensing with nanodiamond-doped polymer thin films
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866913998982610944 |
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| author | Styles, Roy Han, Mengke Goris, Toon Partridge, James Johnson, Brett C. del Rosal, Blanca Abraham, Amanda N. Ebendorff-Heidepriem, Heike Gibson, Brant C. Dontschuk, Nikolai Tetienne, Jean-Philippe Reineck, Philipp |
| author_facet | Styles, Roy Han, Mengke Goris, Toon Partridge, James Johnson, Brett C. del Rosal, Blanca Abraham, Amanda N. Ebendorff-Heidepriem, Heike Gibson, Brant C. Dontschuk, Nikolai Tetienne, Jean-Philippe Reineck, Philipp |
| contents | The nitrogen-vacancy (NV) center is a photoluminescent defect in diamond that exists in different charge states, NV$^-$ and NV$^0$, that are sensitive to the NV's nanoscale environment. Here, we show that photoluminescence (PL) from NV centers in fluorescent nanodiamonds (FNDs) can be employed for all-optical voltage sensing based on electric field-induced NV charge state modulation. More than 95% of FNDs integrated into a capacitor device show a transient increase in NV$^-$ PL intensity of up to 31% within 0.1 ms after application of an external voltage, accompanied by a simultaneous decrease in NV$^0$ PL. The change in NV$^-$ PL increases with increasing applied voltage from 0 to 100 V, corresponding to an electric field of 0 to 625 kV cm$^ {-1}$ in our devices. The electric field sensitivity of a single FND is 19 V cm$^{-1}$ Hz$^ {-1/2}$. We investigate the NV charge state photodynamics on the millisecond timescale and find that the change in NV PL strongly depends on the rate of photoexcitation. We propose a model that qualitatively explains the observed changes in NV PL based on an electric field-induced redistribution of photoexcited electrons from substitutional nitrogen defects to NV centers, leading to a transient conversion of NV$^0$ to NV$^-$ centers upon application of an external voltage. Our results contribute to the development of FNDs as reliable, all-optical, nanoscale electric field sensors in solid-state systems. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2505_07350 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | All-optical electric field sensing with nanodiamond-doped polymer thin films Styles, Roy Han, Mengke Goris, Toon Partridge, James Johnson, Brett C. del Rosal, Blanca Abraham, Amanda N. Ebendorff-Heidepriem, Heike Gibson, Brant C. Dontschuk, Nikolai Tetienne, Jean-Philippe Reineck, Philipp Mesoscale and Nanoscale Physics The nitrogen-vacancy (NV) center is a photoluminescent defect in diamond that exists in different charge states, NV$^-$ and NV$^0$, that are sensitive to the NV's nanoscale environment. Here, we show that photoluminescence (PL) from NV centers in fluorescent nanodiamonds (FNDs) can be employed for all-optical voltage sensing based on electric field-induced NV charge state modulation. More than 95% of FNDs integrated into a capacitor device show a transient increase in NV$^-$ PL intensity of up to 31% within 0.1 ms after application of an external voltage, accompanied by a simultaneous decrease in NV$^0$ PL. The change in NV$^-$ PL increases with increasing applied voltage from 0 to 100 V, corresponding to an electric field of 0 to 625 kV cm$^ {-1}$ in our devices. The electric field sensitivity of a single FND is 19 V cm$^{-1}$ Hz$^ {-1/2}$. We investigate the NV charge state photodynamics on the millisecond timescale and find that the change in NV PL strongly depends on the rate of photoexcitation. We propose a model that qualitatively explains the observed changes in NV PL based on an electric field-induced redistribution of photoexcited electrons from substitutional nitrogen defects to NV centers, leading to a transient conversion of NV$^0$ to NV$^-$ centers upon application of an external voltage. Our results contribute to the development of FNDs as reliable, all-optical, nanoscale electric field sensors in solid-state systems. |
| title | All-optical electric field sensing with nanodiamond-doped polymer thin films |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2505.07350 |