All-optical electric field sensing with nanodiamond-doped polymer thin films

Fuente: arXiv
Saved in:
Bibliographic Details
Main Authors: Styles, Roy, Han, Mengke, Goris, Toon, Partridge, James, Johnson, Brett C., del Rosal, Blanca, Abraham, Amanda N., Ebendorff-Heidepriem, Heike, Gibson, Brant C., Dontschuk, Nikolai, Tetienne, Jean-Philippe, Reineck, Philipp
Format: Preprint
Published: 2025
Subjects:
Online Access:
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1866913998982610944
author Styles, Roy
Han, Mengke
Goris, Toon
Partridge, James
Johnson, Brett C.
del Rosal, Blanca
Abraham, Amanda N.
Ebendorff-Heidepriem, Heike
Gibson, Brant C.
Dontschuk, Nikolai
Tetienne, Jean-Philippe
Reineck, Philipp
author_facet Styles, Roy
Han, Mengke
Goris, Toon
Partridge, James
Johnson, Brett C.
del Rosal, Blanca
Abraham, Amanda N.
Ebendorff-Heidepriem, Heike
Gibson, Brant C.
Dontschuk, Nikolai
Tetienne, Jean-Philippe
Reineck, Philipp
contents The nitrogen-vacancy (NV) center is a photoluminescent defect in diamond that exists in different charge states, NV$^-$ and NV$^0$, that are sensitive to the NV's nanoscale environment. Here, we show that photoluminescence (PL) from NV centers in fluorescent nanodiamonds (FNDs) can be employed for all-optical voltage sensing based on electric field-induced NV charge state modulation. More than 95% of FNDs integrated into a capacitor device show a transient increase in NV$^-$ PL intensity of up to 31% within 0.1 ms after application of an external voltage, accompanied by a simultaneous decrease in NV$^0$ PL. The change in NV$^-$ PL increases with increasing applied voltage from 0 to 100 V, corresponding to an electric field of 0 to 625 kV cm$^ {-1}$ in our devices. The electric field sensitivity of a single FND is 19 V cm$^{-1}$ Hz$^ {-1/2}$. We investigate the NV charge state photodynamics on the millisecond timescale and find that the change in NV PL strongly depends on the rate of photoexcitation. We propose a model that qualitatively explains the observed changes in NV PL based on an electric field-induced redistribution of photoexcited electrons from substitutional nitrogen defects to NV centers, leading to a transient conversion of NV$^0$ to NV$^-$ centers upon application of an external voltage. Our results contribute to the development of FNDs as reliable, all-optical, nanoscale electric field sensors in solid-state systems.
format Preprint
id arxiv_https___arxiv_org_abs_2505_07350
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle All-optical electric field sensing with nanodiamond-doped polymer thin films
Styles, Roy
Han, Mengke
Goris, Toon
Partridge, James
Johnson, Brett C.
del Rosal, Blanca
Abraham, Amanda N.
Ebendorff-Heidepriem, Heike
Gibson, Brant C.
Dontschuk, Nikolai
Tetienne, Jean-Philippe
Reineck, Philipp
Mesoscale and Nanoscale Physics
The nitrogen-vacancy (NV) center is a photoluminescent defect in diamond that exists in different charge states, NV$^-$ and NV$^0$, that are sensitive to the NV's nanoscale environment. Here, we show that photoluminescence (PL) from NV centers in fluorescent nanodiamonds (FNDs) can be employed for all-optical voltage sensing based on electric field-induced NV charge state modulation. More than 95% of FNDs integrated into a capacitor device show a transient increase in NV$^-$ PL intensity of up to 31% within 0.1 ms after application of an external voltage, accompanied by a simultaneous decrease in NV$^0$ PL. The change in NV$^-$ PL increases with increasing applied voltage from 0 to 100 V, corresponding to an electric field of 0 to 625 kV cm$^ {-1}$ in our devices. The electric field sensitivity of a single FND is 19 V cm$^{-1}$ Hz$^ {-1/2}$. We investigate the NV charge state photodynamics on the millisecond timescale and find that the change in NV PL strongly depends on the rate of photoexcitation. We propose a model that qualitatively explains the observed changes in NV PL based on an electric field-induced redistribution of photoexcited electrons from substitutional nitrogen defects to NV centers, leading to a transient conversion of NV$^0$ to NV$^-$ centers upon application of an external voltage. Our results contribute to the development of FNDs as reliable, all-optical, nanoscale electric field sensors in solid-state systems.
title All-optical electric field sensing with nanodiamond-doped polymer thin films
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2505.07350