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Autori principali: Clowes, S. K., Allford, C. P., Shearer, D., Smith, G. V., Simmons, R., Murdin, B. N., Zeitler, U., Buckle, P. D.
Natura: Preprint
Pubblicazione: 2025
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Accesso online:https://arxiv.org/abs/2505.08733
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author Clowes, S. K.
Allford, C. P.
Shearer, D.
Smith, G. V.
Simmons, R.
Murdin, B. N.
Zeitler, U.
Buckle, P. D.
author_facet Clowes, S. K.
Allford, C. P.
Shearer, D.
Smith, G. V.
Simmons, R.
Murdin, B. N.
Zeitler, U.
Buckle, P. D.
contents We studied InSb quantum well devices using Landau level tunneling spectroscopy through a three-terminal differential conductance technique. This method is similar to filled state scanning tunneling microscopy but uses a stationary contact instead of a mobile tip to analyze the two-dimensional electron system. Applying magnetic fields up to 15 T, we identified clear peaks in the differential current-voltage profiles, indicative of Landau level formation. By examining deviations from the expected Landau fan diagram, we extract an absolute value for the exchange-induced energy shift. Through an empirical analysis, we derive a formula describing the exchange shift as a function of both magnetic field strength and electron filling. Our findings indicate that the emptying of the $ν=2$ and $ν=3$ Landau levels causes an exchange interaction energy shift in the $ν=1$ level. Unlike prior studies that infer level energies relative to one another and report oscillatory g-factor behavior, our method references the energy of the Landau levels above the filled states of the contact under a bias voltage, revealing that only the ground state Landau level experiences a measurable exchange shift.
format Preprint
id arxiv_https___arxiv_org_abs_2505_08733
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Absolute measurement of the exchange interaction in an InSb quantum well using Landau-level tunnelling spectroscopy
Clowes, S. K.
Allford, C. P.
Shearer, D.
Smith, G. V.
Simmons, R.
Murdin, B. N.
Zeitler, U.
Buckle, P. D.
Mesoscale and Nanoscale Physics
We studied InSb quantum well devices using Landau level tunneling spectroscopy through a three-terminal differential conductance technique. This method is similar to filled state scanning tunneling microscopy but uses a stationary contact instead of a mobile tip to analyze the two-dimensional electron system. Applying magnetic fields up to 15 T, we identified clear peaks in the differential current-voltage profiles, indicative of Landau level formation. By examining deviations from the expected Landau fan diagram, we extract an absolute value for the exchange-induced energy shift. Through an empirical analysis, we derive a formula describing the exchange shift as a function of both magnetic field strength and electron filling. Our findings indicate that the emptying of the $ν=2$ and $ν=3$ Landau levels causes an exchange interaction energy shift in the $ν=1$ level. Unlike prior studies that infer level energies relative to one another and report oscillatory g-factor behavior, our method references the energy of the Landau levels above the filled states of the contact under a bias voltage, revealing that only the ground state Landau level experiences a measurable exchange shift.
title Absolute measurement of the exchange interaction in an InSb quantum well using Landau-level tunnelling spectroscopy
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2505.08733