High Chern Number Quantum Anomalous Hall States in Haldane-Graphene Multilayers
Fuente:
arXiv
Guardado en:
| Autores principales: | , , |
|---|---|
| Formato: | Preprint |
| Publicado: |
2025
|
| Materias: | |
| Acceso en línea: | |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| _version_ | 1866912787059441664 |
|---|---|
| author | Zhao, Yuejiu Zhang, Long Zhang, Fu-Chun |
| author_facet | Zhao, Yuejiu Zhang, Long Zhang, Fu-Chun |
| contents | We consider a rhombohedral-stacked $N$-layer graphene coupled to a monolayer of Haldane model. We show that high order Dirac points in multilayer graphene can be gapped out by topological proximity effect of the Haldane model layer, leading to total Chern number $|C|=N+1$ quantum anomalous Hall states. This provides a new way to construct high Chern number quantum anomalous Hall states in realistic crystalline graphene systems. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2505_09227 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | High Chern Number Quantum Anomalous Hall States in Haldane-Graphene Multilayers Zhao, Yuejiu Zhang, Long Zhang, Fu-Chun Mesoscale and Nanoscale Physics Materials Science We consider a rhombohedral-stacked $N$-layer graphene coupled to a monolayer of Haldane model. We show that high order Dirac points in multilayer graphene can be gapped out by topological proximity effect of the Haldane model layer, leading to total Chern number $|C|=N+1$ quantum anomalous Hall states. This provides a new way to construct high Chern number quantum anomalous Hall states in realistic crystalline graphene systems. |
| title | High Chern Number Quantum Anomalous Hall States in Haldane-Graphene Multilayers |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2505.09227 |