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Main Authors: Lai, Jia-Min, Bian, Bingyue, Yu, Zhonghai, Guo, Kaiwei, Zhang, Yajing, Zhao, Pengnan, Zhang, Xiaoqian, Tang, Chunyang, Cao, Jiasen, Quan, Zhiyong, Wang, Fei, Xu, Xiaohong
Format: Preprint
Published: 2025
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Online Access:https://arxiv.org/abs/2505.09257
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author Lai, Jia-Min
Bian, Bingyue
Yu, Zhonghai
Guo, Kaiwei
Zhang, Yajing
Zhao, Pengnan
Zhang, Xiaoqian
Tang, Chunyang
Cao, Jiasen
Quan, Zhiyong
Wang, Fei
Xu, Xiaohong
author_facet Lai, Jia-Min
Bian, Bingyue
Yu, Zhonghai
Guo, Kaiwei
Zhang, Yajing
Zhao, Pengnan
Zhang, Xiaoqian
Tang, Chunyang
Cao, Jiasen
Quan, Zhiyong
Wang, Fei
Xu, Xiaohong
contents The growing demand for artificial intelligence and complex computing has underscored the urgent need for advanced data storage technologies. Spin-orbit torque (SOT) has emerged as a leading candidate for high-speed, high-density magnetic random-access memory due to its ultrafast switching speed and low power consumption. This review systematically explores the generation and switching mechanisms of electron-mediated torques (including both conventional SOTs and orbital torques) and magnon-mediated torques. We discuss key materials that enable these effects: heavy metals, topological insulators, low-crystal-symmetry materials, non-collinear antiferromagnets, and altermagnets for conventional SOTs; 3d, 4d, and 5d transition metals for orbital torques; and antiferromagnetic insulator NiO- and multiferroic BiFeO3-based sandwich structures for magnon torques. We emphasize that although key components of SOT devices have been demonstrated, numerous promising materials and critical questions regarding their underlying mechanisms remain to be explored. Therefore, this field represents a dynamic and rapidly evolving frontier in spintronics, offering significant potential for advancing next-generation information storage and computational technologies.
format Preprint
id arxiv_https___arxiv_org_abs_2505_09257
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Recent progress on electron- and magnon-mediated torques
Lai, Jia-Min
Bian, Bingyue
Yu, Zhonghai
Guo, Kaiwei
Zhang, Yajing
Zhao, Pengnan
Zhang, Xiaoqian
Tang, Chunyang
Cao, Jiasen
Quan, Zhiyong
Wang, Fei
Xu, Xiaohong
Materials Science
The growing demand for artificial intelligence and complex computing has underscored the urgent need for advanced data storage technologies. Spin-orbit torque (SOT) has emerged as a leading candidate for high-speed, high-density magnetic random-access memory due to its ultrafast switching speed and low power consumption. This review systematically explores the generation and switching mechanisms of electron-mediated torques (including both conventional SOTs and orbital torques) and magnon-mediated torques. We discuss key materials that enable these effects: heavy metals, topological insulators, low-crystal-symmetry materials, non-collinear antiferromagnets, and altermagnets for conventional SOTs; 3d, 4d, and 5d transition metals for orbital torques; and antiferromagnetic insulator NiO- and multiferroic BiFeO3-based sandwich structures for magnon torques. We emphasize that although key components of SOT devices have been demonstrated, numerous promising materials and critical questions regarding their underlying mechanisms remain to be explored. Therefore, this field represents a dynamic and rapidly evolving frontier in spintronics, offering significant potential for advancing next-generation information storage and computational technologies.
title Recent progress on electron- and magnon-mediated torques
topic Materials Science
url https://arxiv.org/abs/2505.09257